SK Hynix's Next-Gen HBM Embraces Hybrid Bonding Tech

In a recent update reported by Business Korea, SK Hynix, a prominent player in the electronics industry, unveiled a significant development during the IEEE International Electron Devices Meeting (IEDM 2023). The company proudly announced the successful implementation of a hybrid bonding process to enhance the reliability of its third-generation High Bandwidth Memory (HBM2E).

The third-generation HBM, boasting an 8-layer stacked DRAM, demonstrated remarkable resilience by passing rigorous reliability tests post the incorporation of the hybrid bonding technique. SK Hynix further conducted a comprehensive evaluation of the HBM's operational lifespan under elevated temperatures and meticulously examined potential challenges customers might encounter during the chip bonding process after product shipment.

The adoption of hybrid bonding is considered revolutionary within the HBM industry. Traditionally, HBM relies on micro bump materials for wafer connection. However, the introduction of hybrid bonding allows for chip connectivity without relying on bumps, resulting in a significant reduction in chip thickness once micro bumps are eliminated.

As of now, the standard thickness of HBM chips stands at 720µm. SK Hynix projects the mass production of the sixth generation of HBM (HBM4) by 2026. This next iteration necessitates the vertical stacking of 16 DRAMs, presenting a formidable challenge for existing packaging technologies. Consequently, industry experts anticipate the integration of hybrid bonding in the upcoming generation of HBM processes.

It's noteworthy that SK Hynix conducted the hybrid bonding technology test on its third-generation product, showcasing its potential even with lower specifications and only half the number of DRAM layers compared to HBM4. This demonstration holds significant importance in highlighting the capabilities of hybrid bonding.

Moving forward, SK Hynix plans to seamlessly integrate hybrid bonding technology into its HBM4 products. This strategic move underscores the company's commitment to maintaining a leadership position in the dynamic HBM industry. Building on its track record, SK Hynix had previously pioneered the use of Mass Reflow Molded Underfill (MR-MUF) technology in the manufacturing of its fifth-generation HBM, solidifying its status as an industry frontrunner.