Samsung Set to Launch 280-Layer 3D QLC NAND Flash

Samsung has officially disclosed its plan to showcase the cutting-edge 280-layer stacked 3D QLC NAND Flash at the prestigious IEEE International Solid-State Circuits Conference (ISSCC), scheduled from February 18 to February 22 in San Francisco, USA. This groundbreaking innovation sets a new standard for data storage density within the realm of NAND Flash technology.

The presentation, titled "A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm² Areal Density and a 3.2GB/s High-Speed 10 Rate," provides insights into the key features of Samsung's 280-layer 1Tb QLC 3D NAND Flash:

The 280-layer 3D NAND Flash is a vertical stack of 280 layers of storage units, significantly boosting storage density.

The individual chip boasts an impressive capacity of 1 terabit, equivalent to 1024 gigabits.

Designated as "4b/cell," each storage unit can efficiently store 4 bits, with each data point occupying 0.25 storage units.

The "28.5Gb/mm²" indicates an extraordinary storage density, revealing that each square millimeter of storage units can effectively store 28.5 gigabits of data.

The "3.2GB/s High-Speed 10 Rate" denotes the flash chip's maximum data read speed, reaching an impressive 3.2 gigabytes per second. The term "High-Speed 10 Rate" may refer to a specific interface standard or transmission protocol.

According to insights from Samsung's previously disclosed PowerPoint presentation, the QLC NAND V9 flash promises M.2 hard drives with a remarkable capacity of up to 8TB, surpassing 2.4Gbps in I/O speed per individual chip. This places it in direct competition with today's TLC flash storage. The real-world performance of these products upon release will be closely monitored in the coming months. Stay tuned for updates on this groundbreaking development.