Welcome to SmBom Tesco!
All Products

Samsung Set to Launch 280-Layer 3D QLC NAND Flash

twitter photos
facebook photos
instagram photos

Samsung Set to Launch 280-Layer 3D QLC NAND Flash

Samsung has officially disclosed its plan to showcase the cutting-edge 280-layer stacked 3D QLC NAND Flash at the prestigious IEEE International Solid-State Circuits Conference (ISSCC), scheduled from February 18 to February 22 in San Francisco, USA. This groundbreaking innovation sets a new standard for data storage density within the realm of NAND Flash technology.

The presentation, titled "A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm² Areal Density and a 3.2GB/s High-Speed 10 Rate," provides insights into the key features of Samsung's 280-layer 1Tb QLC 3D NAND Flash:

The 280-layer 3D NAND Flash is a vertical stack of 280 layers of storage units, significantly boosting storage density.

The individual chip boasts an impressive capacity of 1 terabit, equivalent to 1024 gigabits.

Designated as "4b/cell," each storage unit can efficiently store 4 bits, with each data point occupying 0.25 storage units.

The "28.5Gb/mm²" indicates an extraordinary storage density, revealing that each square millimeter of storage units can effectively store 28.5 gigabits of data.

The "3.2GB/s High-Speed 10 Rate" denotes the flash chip's maximum data read speed, reaching an impressive 3.2 gigabytes per second. The term "High-Speed 10 Rate" may refer to a specific interface standard or transmission protocol.

According to insights from Samsung's previously disclosed PowerPoint presentation, the QLC NAND V9 flash promises M.2 hard drives with a remarkable capacity of up to 8TB, surpassing 2.4Gbps in I/O speed per individual chip. This places it in direct competition with today's TLC flash storage. The real-world performance of these products upon release will be closely monitored in the coming months. Stay tuned for updates on this groundbreaking development.


Solemnly declare: The copyright of this article belongs to the original author. The reprinted article is only for the purpose of disseminating more information. If the author's information is marked incorrectly, please contact us to modify or delete it as soon as possible. Thank you for your attention!