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BSC059N04LSGATMA1: Features, Specs & More

2024-03-21 15:22:36Mr.Ming
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BSC059N04LSGATMA1: Features, Specs & More

Introducing the Infineon Technologies BSC059N04LSGATMA1, a game-changer in the realm of power MOSFETs. In this comprehensive article, we'll delve into the intricacies of the BSC059N04LSGATMA1, uncovering its definition, key features, specifications, applications, and a closer look at its manufacturer.


BSC059N04LSGATMA1's Overview

At its core, the BSC059N04LSGATMA1 is a Trans MOSFET, operating in the N-Channel configuration with a maximum drain-source voltage of 40V and a continuous drain current of 16A. It boasts a single quad drain triple source setup, leveraging Infineon's proprietary OptiMOS process technology for enhanced performance and reliability.


Key Features

Let's delve into the standout features that make BSC059N04LSGATMA1 a game-changer:

· Operates at a maximum drain-source voltage of 40V, ensuring robust performance in various applications.

· Supports a maximum continuous drain current of 16A, making it suitable for high-power requirements.

· Exhibits low drain-source resistance of 5.9MOhm at 10V, ensuring efficient power transmission.

· Fast switching times with typical fall time of 3.8ns and rise time of 3.4ns, optimizing performance in dynamic applications.

· Wide operating temperature range from -55°C to 150°C, enabling functionality in extreme environments.

· Compact TDSON EP package with surface-mount mounting, facilitating easy integration into electronic circuits.

 

Specifications

Now, let's delve into the technical specifications that make the BSC059N04LSGATMA1 a standout choice for electronic projects:

Type

Parameter

Product Category

Power MOSFET

Configuration

Single Quad Drain Triple Source

Process Technology

OptiMOS

Channel Mode

Enhancement

Channel Type

N

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

2

Maximum Continuous Drain Current (A)

16

Maximum Drain Source Resistance (MOhm)

5.9@10V

Typical Gate Charge @ Vgs (nC)

14@4.5V|30@10V

Typical Gate Charge @ 10V (nC)

30

Typical Input Capacitance @ Vds (pF)

2400@20V

Maximum Power Dissipation (mW)

2500

Typical Fall Time (ns)

3.8

Typical Rise Time (ns)

3.4

Typical Turn-Off Delay Time (ns)

23

Typical Turn-On Delay Time (ns)

5.6

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Packaging

Tape and Reel

Mounting

Surface Mount

Package Height

1

Package Width

5.9

Package Length

5.15

PCB changed

8

Standard Package Name

SON

Supplier Package

TDSON EP

Pin Count

8

Lead Shape

No Lead

 

Applications

The versatility of the BSC059N04LSGATMA1 extends across various applications, including but not limited to:

· Power Supplies: Delivering efficient power management in DC-DC converters and voltage regulation circuits.

· Motor Control: Enabling precise control and modulation in motor drive systems.

· LED Lighting: Facilitating efficient current control and switching in LED driver circuits.

· Battery Management: Optimizing battery charging and discharging processes in portable electronic devices.

 

BSC059N04LSGATMA1's Manufacturer

Established in 1999, Infineon Technologies has emerged as a global leader in semiconductor solutions, pioneering innovations that power various industries worldwide. Headquartered in Neubiberg, Germany, the company has played a pivotal role in shaping the landscape of modern electronics. Infineon specializes in designing and manufacturing advanced semiconductor technologies, encompassing power management, automotive electronics, industrial applications, and security solutions.


Conclusion

In conclusion, Infineon Technologies BSC059N04LSGATMA1 emerges as a formidable solution for power management challenges in modern electronics. With its impressive features, specifications, and versatile applications, it empowers engineers to design innovative and efficient systems across various industries.

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