Samsung: 290-Layer NAND This Month, 430-Layer Next Year

On April 12th, as reported by Kedglobal, Samsung Electronics, the global leader in memory chip manufacturing, announced its commencement of mass production for the 9th generation Vertical (V9) NAND chips later this month. This strategic move aims to propel the industry towards high-stacked, high-density flash memory, positioning Samsung ahead of its competitors. Furthermore, insiders revealed Samsung's plan to unveil 430-layer NAND chips next year, responding to the escalating demand for high-performance storage devices in the era of artificial intelligence.

The V9 NAND, succeeding Samsung's flagship 236-layer V8 NAND product, will reach an impressive 290 layers. Primarily targeted at large-scale enterprise servers, as well as artificial intelligence and cloud devices, the V9 NAND leverages Samsung's double-stack technology, promising streamlined processes and reduced manufacturing costs.

Looking ahead, Samsung will adopt a triple-stack structure for its highly anticipated 10th generation V-NAND flash memory, slated for introduction next year. This decision comes as triple-stack or triple-level cell technology emerges as the preferred method for manufacturing approximately 300-layer chips, albeit with added complexities in stack alignment. SK Hynix's forthcoming 321-layer NAND flash memory, set for production next year, is set to embrace this innovative structure.

TechInsights, a renowned semiconductor industry research firm, anticipates Samsung's 10th generation V-NAND flash memory to soar to 430 layers, further solidifying Samsung's pioneering role in memory chip technology advancement.