ROHM's SiCrystal and ST Sign New SiC Wafer Supply Deal

On April 22, ROHM and STMicroelectronics announced an extension of their long-term partnership agreement for 150mm (6-inch) silicon carbide (SiC) wafer substrates. STMicroelectronics China stated that the new agreement will see SiCrystal, a subsidiary of the ROHM Group, increase its supply of SiC wafer substrates produced in Nuremberg, Germany, to STMicroelectronics. The total value of the agreement is expected to be at least $230 million.

Geoff West, Executive Vice President and Chief Purchasing Officer at STMicroelectronics, emphasized that this expanded agreement with SiCrystal would provide ST with additional 150mm (6-inch) SiC wafer substrates, boosting its SiC chip production capacity. This advancement will better serve the global automotive and industrial markets while balancing internal and external supply ratios to enhance supply chain resilience.

Dr. Robert Eckstein, President and CEO of SiCrystal, highlighted SiCrystal's many years of experience in SiC wafer substrate manufacturing as a ROHM Group company. He expressed enthusiasm for extending and expanding the collaboration with their long-term partner ST. SiCrystal will continue to support partners in growing their SiC business by maintaining reliable product quality and increasing production capacity for 6-inch SiC wafer substrates.

SiCrystal, a subsidiary of the ROHM Group, is a leading manufacturer of SiC substrates and a prominent player in the global market for monocrystalline silicon carbide wafers.