GlobalFoundries Acquires Tagore's GaN Technology

GlobalFoundries (GF), a leading semiconductor foundry, has acquired Tagore’s proprietary and production-proven gallium nitride (GaN) technology and intellectual property (IP) portfolio. This strategic acquisition aims to enhance efficiency and performance in a wide range of power applications, including automotive, IoT, and AI data centers.

As the digital landscape evolves with technologies like generative AI, GaN has become a key solution for sustainable and efficient power management, especially in data centers. GF’s acquisition underscores its commitment to mass-producing GaN technology, which offers significant benefits such as meeting increasing power demands, improving power efficiency, reducing costs, and managing heat generation.

This move expands GF’s power IP portfolio and enhances access to market-leading GaN IP, allowing customers to quickly bring differentiated products to market. Additionally, an experienced engineering team from Tagore will join GF, focusing on the continued development of GaN technology.

Amitava Das, Co-Founder and COO of Tagore Technology, stated, “The demand for energy-efficient semiconductors is rapidly increasing. Tagore has been at the forefront of developing innovative solutions using GaN technology for various power devices. My team and I are excited to join GF, where we can further our focus on leading-edge IP, addressing power design challenges, and supporting the continuous development of power delivery systems for automotive, industrial, and AI data centers.”

Earlier this year, GF secured a $1.5 billion direct grant from the U.S. CHIPS and Science Act. Part of this investment will be directed towards the mass production of critical technologies, including GaN, to ensure the secure production of essential chips. By combining this new manufacturing capability with Tagore’s technical expertise, GF aims to revolutionize the efficiency of AI systems, particularly in edge and IoT devices where reducing power consumption is vital.

Tagore Technology, founded in January 2011, has pioneered GaN-on-Si semiconductor technology for RF and power management applications, with design centers in Arlington Heights, Illinois, and Kolkata, India.