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IRLR3410TRPBF: Features, Specs & More

2024-07-02 15:16:09Mr.Ming
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IRLR3410TRPBF: Features, Specs & More

In the realm of electronic components, the Infineon IRLR3410TRPBF stands out as a robust N-channel enhancement mode MOSFET. In this comprehensive article, we'll delve into the intricacies of the IRLR3410TRPBF, uncovering its definition, key features, specifications, applications, and a closer look at its manufacturer.

 

Catalog

LM5163DDAR's Overview

Key Features

Specifications

Applications

LM5163DDAR's Manufacturer

Conclusion

 

IRLR3410TRPBF's Overview

The Infineon IRLR3410TRPBF is a state-of-the-art N-channel MOSFET designed for high-performance applications in power management. It operates with a maximum drain-source voltage of 100V and can handle a continuous drain current of up to 17A, making it suitable for a wide range of industrial and consumer electronics.

 

Key Features

Let's delve into the standout features that make the IRLR3410TRPBF a standout in the world of electronics:

· The Infineon IRLR3410TRPBF MOSFET can handle up to 17A of continuous drain current, making it suitable for applications requiring robust power delivery.

· With a maximum drain-source resistance of 105 mOhm at 10V gate-source voltage, it minimizes power loss and ensures efficient operation in various circuit designs.

· Featuring a quick turn-on delay time of 7.2 ns and turn-off delay time of 30 ns, it enables rapid switching transitions essential for high-frequency applications.

· Designed to dissipate up to 79,000 mW, it maintains reliability even under demanding thermal conditions, ensuring stable performance in critical environments.

 

Specifications

Now, let's take a closer look at the technical specifications that define the capabilities of the IRLR3410TRPBF:


Type

Parameter

Product Category

Power MOSFET

Material

Si

Configuration

Single

Process Technology

HEXFET

Channel Mode

Enhancement

Channel Type

N

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±16

Maximum Continuous Drain Current (A)

17

Maximum Drain Source Resistance (MOhm)

105@10V

Typical Gate Charge @ Vgs (nC)

34(Max)@5V

Typical Input Capacitance @ Vds (pF)

800@25V

Maximum Power Dissipation (mW)

79000

Typical Fall Time (ns)

26

Typical Rise Time (ns)

53

Typical Turn-Off Delay Time (ns)

30

Typical Turn-On Delay Time (ns)

7.2

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Packaging

Tape and Reel

Mounting

Surface Mount

Package Height

2.39(Max)

Package Width

6.22(Max)

Package Length

6.73(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-252

Supplier Package

DPAK

Pin Count

3

 * IRLR3410TRPBF's Datasheet

 

Applications

The Infineon IRLR3410TRPBF MOSFET finds applications across various domains including:

· Power Supplies: Used in DC-DC converters, AC-DC converters, and switching regulators.

· Motor Control: Ideal for motor drives in industrial automation and robotics.

· LED Lighting: Enables efficient current control in LED drivers.

· Battery Management: Facilitates battery charging and discharging control in portable devices and electric vehicles.

 

IRLR3410TRPBF's Manufacturer

Established in 1999, Infineon Technologies has emerged as a global leader in semiconductor solutions, pioneering innovations that power various industries worldwide. Headquartered in Neubiberg, Germany, the company has played a pivotal role in shaping the landscape of modern electronics. Infineon specializes in designing and manufacturing advanced semiconductor technologies, encompassing power management, automotive electronics, industrial applications, and security solutions.

 

Conclusion

In conclusion, the Infineon IRLR3410TRPBF MOSFET stands out as a robust choice for applications demanding high voltage capability, efficient power management, and reliable performance.

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