In the realm of electronic components, the ON Semiconductor MJD2955T4G stands out as a robust choice for power management and amplification needs. This PNP bipolar junction transistor (BJT) offers impressive performance metrics tailored to handle substantial currents and voltages efficiently. In this comprehensive article, we'll delve into the intricacies of the MJD2955T4G, uncovering its definition, key features, specifications, applications, and a closer look at its manufacturer.
Catalog
The MJD2955T4G is classified as a silicon PNP transistor, belonging to the bipolar power category. Its design revolves around a single silicon chip configuration, optimized for high-power applications. With a maximum collector-emitter voltage of 60V and a maximum DC collector current of 10A, this transistor excels in environments requiring reliable power control.
Let's delve into the standout features that make the MJD2955T4G a standout in the world of electronics:
· With a maximum DC collector current of 10A, this transistor is suitable for applications requiring substantial current handling.
· It offers a maximum collector-base voltage of 70V and a maximum collector-emitter voltage of 60V, ensuring robust performance in high-voltage environments.
· The MJD2955T4G can dissipate up to 1750mW, allowing it to handle significant power loads without overheating.
· It comes in a DPAK (TO-252) surface-mount package, making it easy to integrate into various PCB designs.
· With an operating temperature range from -55°C to 150°C, this transistor is reliable in diverse environmental conditions.
Now, let's take a closer look at the technical specifications that define the capabilities of the MJD2955T4G:
Type | Parameter |
Type | PNP |
Product Category | Bipolar Power |
Material | Si |
Configuration | Single |
Number of Elements per Chip | 1 |
Maximum Collector Base Voltage (V) | 70 |
Maximum Collector-Emitter Voltage (V) | 60 |
Maximum Emitter Base Voltage (V) | 5 |
Maximum Collector-Emitter Saturation Voltage (V) | 1.1@0.4A@4A|8@3.3A@10A |
Maximum DC Collector Current (A) | 10 |
Maximum Collector Cut-Off Current (nA) | 20000 |
Minimum DC Current Gain | 20@4A@4V|5@10A@4V |
Maximum Power Dissipation (mW) | 1750 |
Maximum Transition Frequency (MHz) | 2(Min) |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Mounting | Surface Mount |
Package Height | 2.38(Max) |
Package Width | 6.22(Max) |
Package Length | 6.73(Max) |
PCB changed | 2 |
Tab | Tab |
Standard Package Name | TO-252 |
Supplier Package | DPAK |
Pin Count | 3 |
Lead Shape | Gull-wing |
The onsemi MJD2955T4G is used in a variety of applications, including:
· Power Switching: Its high current and voltage ratings make it ideal for switching high power loads.
· Amplification: It is commonly used in audio and RF amplification circuits due to its ability to handle large currents.
· Motor Control: This transistor is suitable for motor control applications, where precise current and voltage handling are crucial.
· Power Supply Circuits: It plays a key role in regulating and managing power in various electronic devices and systems.
ON Semiconductor, stylized in lowercase as "onsemi", stands at the forefront of technological innovation, driving advancements that power intelligent and energy-efficient systems worldwide. With a commitment to delivering cutting-edge solutions, ON Semiconductor provides a comprehensive portfolio of semiconductor products, spanning power management, analog, sensor, and connectivity solutions. Leveraging a legacy of over 20 years, the company has solidified its position as a trusted partner for industries ranging from automotive and industrial to consumer electronics and healthcare.
The onsemi MJD2955T4G is a versatile and reliable PNP bipolar power transistor, suitable for a wide range of applications in the electronics industry. Its high current capacity, voltage ratings, and robust design make it a valuable component for engineers and designers.