Samsung 2nm to Increase EUV Layers by 30% Over 3nm

Samsung is poised to increase the number of Extreme Ultraviolet (EUV) layers by 30% in its forthcoming 2nm process node compared to its 3nm node. Reliable sources indicate that while Samsung's 3nm node comprises 20 EUV layers, the 2nm node will feature an impressive 26 layers.

Looking ahead, Samsung's 1.4nm process is anticipated to commence production in 2027, boasting over 30 EUV layers. Samsung pioneered the use of EUV technology in its 7nm logic process node in 2018. Since then, the company has progressively increased the number of EUV layers with each transition to more advanced nodes, such as 5nm and 3nm, thereby enhancing chip production efficiency.

In the competitive landscape, wafer foundries are racing to procure additional EUV lithography machines from ASML to support their cutting-edge nodes. Reports suggest that TSMC plans to order 65 EUV machines by 2025.

Samsung is also integrating EUV technology into DRAM production. The company has employed up to 7 EUV layers in its sixth-generation 10nm DRAM, whereas SK Hynix has utilized 5 EUV layers.

As more semiconductor manufacturers expand their EUV processes, ancillary industries—including photoresists, blank masks, and thin films—are expected to see substantial growth.