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PT908-7C-F: Features, Specs & More

2024-07-26 15:18:21Mr.Ming
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PT908-7C-F: Features, Specs & More

In the ever-evolving world of electronics, the choice of components can significantly influence the performance of your designs. Among the array of phototransistors available, the Everlight PT908-7C-F stands out as a notable option for those seeking reliability and efficiency. In this comprehensive article, we'll delve into the intricacies of the PT908-7C-F, uncovering its definition, key features, specifications, applications, and a closer look at its manufacturer.

 

Catalog

PT908-7C-F's Overview

Key Features

Specifications

Applications

PT908-7C-F's Manufacturer

Conclusion

 

PT908-7C-F's Overview

The Everlight PT908-7C-F is a phototransistor designed specifically for infrared (IR) light detection. Operating at a peak wavelength of 940nm, this component excels in various electronic applications where precise IR signal detection is crucial. Its design incorporates a clear domed lens and silicon material, ensuring optimal performance and durability.

 

Key Features

Let's delve into the standout features that make the PT908-7C-F a standout in the world of electronics:

· The PT908-7C-F boasts a maximum light current of 5000 µA, ensuring reliable detection of infrared signals even in low-light conditions.

· With a maximum rise and fall time of 15,000 ns, this phototransistor responds quickly to changes in light intensity, making it suitable for high-speed data transmission.

· It can handle a maximum collector current of 20 mA and has a maximum power dissipation of 75 mW, providing durability and stability in various operating environments.

· Capable of operating from -25°C to 85°C, the PT908-7C-F is designed to function reliably in both extreme cold and heat.


Specifications

Now, let's take a closer look at the technical specifications that define the capabilities of the PT908-7C-F:

Type

Parameter

Type

IR Chip

Phototransistor Type

Phototransistor

Lens Shape Type

Domed

Lens Color

Clear

Material

Silicon

Number of Channels per Chip

1

Polarity

NPN

Viewing Orientation

Side View

Peak Wavelength (nm)

940

Maximum Rise Time (ns)

15000(Typ)

Maximum Fall Time (ns)

15000(Typ)

Maximum Light Current (uA)

5000

Maximum Collector Current (mA)

20

Maximum Dark Current (nA)

100

Maximum Emitter-Collector Voltage (V)

5

Maximum Collector-Emitter Voltage (V)

30

Maximum Collector-Emitter Saturation Voltage (V)

0.4

Maximum Power Dissipation (mW)

75

Fabrication Technology

NPN Transistor

Minimum Operating Temperature (°C)

-25

Maximum Operating Temperature (°C)

85

Packaging

Bag

Mounting

Through Hole

Package Height

5.7

Package Width

2.25

Package Length

4.5

PCB changed

2

Standard Package Name

Side Looker

Supplier Package

Side Looker

Pin Count

2

 * PT908-7C-F's Datasheet

 

Applications

The Everlight PT908-7C-F is suitable for various applications due to its high sensitivity and robust electrical characteristics. Typical uses include:

· IR Remote Controls: Effective in remote control systems where accurate IR signal detection is necessary.

· Optical Encoders: Useful in optical encoding applications for position sensing.

· Security Systems: Ideal for use in security systems requiring reliable IR detection for motion sensing.

· Consumer Electronics: Fits well in devices that rely on IR communication, such as electronic appliances and toys.

 

PT908-7C-F's Manufacturer

EVERLIGHT Electronics Co., Ltd. was founded in 1983 in Taipei, Taiwan led by Chairman Robert Yeh. EVERLIGHT has over 40 years of R&D experience for reliable capability. EVERLIGHT provides a diverse product portfolio consisting of High Power LEDs, SMD LEDs, Lamps, Lighting Components, LED Lighting Modules, Digital Displays, Opto-couplers and Infrared Components for various applications.

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Conclusion

The Everlight PT908-7C-F phototransistor is an exceptional choice for various IR detection applications. Its high light sensitivity, reliable performance, and versatile operating conditions make it a valuable component in modern electronic designs.

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