SI2302CDS-T1-GE3: Features, Specs & More
In the ever-evolving world of electronics, power management components are crucial for efficient performance and reliability. Among these components, the MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) plays a vital role. One such exemplary MOSFET is the Vishay / Siliconix SI2302CDS-T1-GE3. In this comprehensive article, we'll delve into the intricacies of the SI2302CDS-T1-GE3, uncovering its definition, key features, specifications, applications, and a closer look at its manufacturer.
Catalog
SI2302CDS-T1-GE3's Manufacturer
SI2302CDS-T1-GE3's Overview
The Vishay / Siliconix SI2302CDS-T1-GE3 is an N-channel enhancement-mode MOSFET. This type of MOSFET is designed to operate with a positive gate-source voltage, making it ideal for a range of power management applications. The component is part of the TrenchFET series, which is known for its low on-resistance and high efficiency. Packaged in a compact SOT-23 form factor, this MOSFET is optimized for surface mount technology, offering ease of integration into various electronic designs.
Key Features
Let's delve into the standout features that make the SI2302CDS-T1-GE3 a standout in the world of electronics:
· The SI2302CDS-T1-GE3 features a single N-channel MOSFET, providing efficient switching and amplification capabilities.
· This advanced process technology ensures low on-resistance and high efficiency, enhancing the overall performance of the component.
· With a maximum continuous drain current of 2.6A, this MOSFET can handle significant power loads.
· The SOT-23 package with a 3-pin configuration is designed for surface mounting, making it suitable for space-constrained applications.
· The SI2302CDS-T1-GE3 can operate in temperatures ranging from -55°C to 150°C, ensuring reliability in various environmental conditions.
Specifications
Now, let's take a closer look at the technical specifications that define the capabilities of the SI2302CDS-T1-GE3:
Type | Parameter |
Product Category | Power MOSFET |
Configuration | Single |
Process Technology | TrenchFET |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 20 |
Maximum Gate Source Voltage (V) | ±8 |
Maximum Gate Threshold Voltage (V) | 0.85 |
Operating Junction Temperature (°C) | -55 to 150 |
Maximum Continuous Drain Current (A) | 2.6 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum IDSS (uA) | 0.1 |
Maximum Drain Source Resistance (MOhm) | 57@4.5V |
Typical Gate Charge @ Vgs (nC) | 3.5@4.5V |
Typical Gate to Drain Charge (nC) | 0.45 |
Typical Gate to Source Charge (nC) | 0.6 |
Typical Reverse Recovery Charge (nC) | 2 |
Typical Output Capacitance (pF) | 40 |
Maximum Power Dissipation (mW) | 860 |
Typical Fall Time (ns) | 7 |
Typical Rise Time (ns) | 7 |
Typical Turn-Off Delay Time (ns) | 30 |
Typical Turn-On Delay Time (ns) | 8 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Mounting | Surface Mount |
Package Height | 1.02(Max) |
Package Width | 1.4(Max) |
Package Length | 3.04(Max) |
PCB changed | 3 |
Standard Package Name | SOT |
Supplier Package | SOT-23 |
Pin Count | 3 |
Lead Shape | Gull-wing |
* SI2302CDS-T1-GE3's Datasheet
Applications
The Vishay / Siliconix SI2302CDS-T1-GE3 is designed for a variety of applications, including:
· Load Switching in Portable Devices: Ideal for battery-powered devices where efficient power management is crucial.
· DC/DC Converters: Enhances efficiency in power conversion applications, supporting a wide range of voltage and current requirements.
SI2302CDS-T1-GE3's Manufacturer
Siliconix was founded in 1962. In 1998, Vishay acquired the Semiconductor Business Group of TEMIC, which included 80% of Siliconix. Vishay purchased the remaining 20% of Siliconix shares in 2005. As the world's number-one brand of low-voltage power MOSFETs (metal-oxide semiconductor field-effect transistors), Vishay Siliconix products play a key role in making handheld and portable electronic systems operate more efficiently from smaller and lighter battery packs. Vishay Siliconix milestones include the first analog switch, the first analog multiplexer, the first small-outline power MOSFET (LITTLE FOOT®), and the first power MOSFETs built on Trench technology (TrenchFET®). Vishay Siliconix power ICs focus on delivering the optimal and appropriate level of integration for power management and conversion. The Vishay Siliconix product portfolio now also features high-voltage planar MOSFETs acquired from International Rectifier.
Conclusion
The Vishay / Siliconix SI2302CDS-T1-GE3 MOSFET is a versatile and efficient component that excels in load switching and DC/DC conversion applications. Its compact size, advanced TrenchFET technology, and robust performance make it a go-to choice for engineers looking to optimize their electronic designs.
