Samsung P4 Phase 1 to Produce Both DRAM and NAND Flash

According to a report by South Korean media outlet ZDNET Korea, Samsung Electronics has adjusted its production plans for the Phase 1 production line at the Pyeongtaek P4 campus in response to shifting market demand. Initially dedicated to NAND Flash production, the line will now be restructured to manufacture both NAND Flash and DRAM products.

The rebranding of the production line highlights this shift: previously labeled as "P4F," where "F" stood for NAND Flash, it is now renamed "P4H," with "H" signifying a hybrid production line. This renaming reflects the facility's dual capacity for NAND Flash and DRAM production.

Currently, Samsung has partially installed NAND Flash equipment in the Phase 1 line and aims to increase production to 10,000 wafers per month by the end of this year. However, due to market uncertainties, further investments for V9 QLC NAND advancements are expected to be planned by mid-2025.

For DRAM production, the P4 line's Phase 1 segment is expected to support a monthly capacity of 30,000 to 40,000 wafers, employing Samsung's advanced 10nm-class 1a and 1b process technologies. This expansion will allow Samsung to meet increased market demands and ensure stable DRAM availability while the company upgrades its other DRAM production lines.

The P4 campus is planned as a four-phase development project. Construction on the third phase, dedicated to DRAM production, is set to begin soon. However, investment in the second-phase foundry line has been temporarily postponed in light of recent strategic decisions.