onsemi Acquires Qorvo's SiC JFET Tech for $115M

onsemi has announced that it has reached an agreement to acquire Qorvo's silicon carbide junction field-effect transistor (SiC JFET) technology business for $115 million in cash. This acquisition includes Qorvo's subsidiary, United Silicon Carbide, and is expected to close in the first quarter of 2025, subject to customary closing conditions.

This strategic acquisition will enhance onsemi's comprehensive EliteSiC power product portfolio, enabling the company to meet the growing demand for high efficiency and high power density in AC-DC stages of AI data center power supplies. Furthermore, it will accelerate onsemi's efforts to prepare for emerging markets, such as electric vehicle battery disconnects and solid-state circuit breakers (SSCBs).

SiC JFET technology offers the lowest on-state resistance per chip area, utilizing less space than any other technology—approximately half the size. Additionally, it enables the use of standard off-the-shelf drivers, which have been deployed with silicon-based transistors for decades. These advantages lead to faster development, reduced energy consumption, and lower system costs, providing significant value for power designers and data center operators.

"As AI workloads become increasingly complex and power-hungry, the importance of reliable SiC JFETs continues to grow, delivering high energy efficiency and handling high voltages," said Simon Keeton, President and General Manager of onsemi's Power Solutions Group. "By adding Qorvo's industry-leading SiC JFET technology, our smart power portfolio offers another solution for optimizing energy consumption and improving power density for our customers."