SI2301BDS-T1-GE3: Features, Specs & More
In the world of electronics, components that can efficiently handle power and provide stability are crucial. One such component is the Vishay SI2301BDS-T1-GE3, a P-channel MOSFET that has earned recognition for its excellent performance in a variety of applications. In this comprehensive article, we'll delve into the intricacies of the SI2301BDS-T1-GE3, uncovering its definition, key features, specifications, applications, and a closer look at its manufacturer.
Catalog
SI2301BDS-T1-GE3's Manufacturer
SI2301BDS-T1-GE3's Overview
The SI2301BDS-T1-GE3 is a P-Channel MOSFET manufactured by Vishay, a leading semiconductor provider. This TrenchFET technology-based component offers high efficiency and low power dissipation in a small SOT-23 package. It is commonly used in power switching applications, ensuring that voltage and current are precisely regulated in a variety of circuits.
The MOSFET’s ability to operate at voltages up to 20V with a continuous drain current of 2.2A makes it a reliable choice for designs requiring efficient, high-speed switching capabilities.
Key Features
Let's delve into the standout features that make the SI2301BDS-T1-GE3 a standout in the world of electronics:
· The TrenchFET technology delivers low Rds(on), improving efficiency and reducing power dissipation.
· Ideal for space-constrained designs, the 3-pin SOT-23 package makes integration into small PCBs simple and effective.
· With a typical rise time of 40ns and fall time of 20ns, the MOSFET can handle rapid switching applications with ease.
· With an operating temperature range from -55°C to 150°C, this component is suitable for a broad spectrum of industrial and consumer electronics.
· A typical gate charge of just 4.5nC at 4.5V ensures efficient switching with minimal power loss.
Specifications
Now, let's take a closer look at the technical specifications that define the capabilities of the SI2301BDS-T1-GE3:
Type | Parameter |
Product Category | Power MOSFET |
Material | Si |
Configuration | Single |
Process Technology | TrenchFET |
Channel Mode | Enhancement |
Channel Type | P |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 20 |
Maximum Gate Source Voltage (V) | ±8 |
Maximum Continuous Drain Current (A) | 2.2 |
Maximum Drain Source Resistance (MOhm) | 100@4.5V |
Typical Gate Charge @ Vgs (nC) | 4.5@4.5V |
Typical Input Capacitance @ Vds (pF) | 375@6V |
Maximum Power Dissipation (mW) | 900 |
Typical Fall Time (ns) | 20 |
Typical Rise Time (ns) | 40 |
Typical Turn-Off Delay Time (ns) | 30 |
Typical Turn-On Delay Time (ns) | 20 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Mounting | Surface Mount |
Package Height | 1.02(Max) |
Package Width | 1.4(Max) |
Package Length | 3.04(Max) |
PCB changed | 3 |
Standard Package Name | SOT |
Supplier Package | SOT-23 |
Pin Count | 3 |
Lead Shape | Gull-wing |
* SI2301BDS-T1-GE3's Datasheet
Applications
The SI2301BDS-T1-GE3 is versatile and can be used in numerous applications, including:
· Power Management Systems: Efficient power control in battery-operated devices.
· Switching Regulators: Ideal for use in DC-DC converters due to its high efficiency and low power dissipation.
· Consumer Electronics: Integrated into mobile phones, laptops, and other portable devices where size and efficiency are paramount.
· Automotive Electronics: Supports reliable performance in automotive power systems, ensuring durability across wide temperature ranges.
· Motor Drives: Suitable for driving small motors in consumer devices or industrial equipment, offering excellent switching performance.
SI2301BDS-T1-GE3's Manufacturer
Siliconix was founded in 1962. In 1998, Vishay acquired the Semiconductor Business Group of TEMIC, which included 80% of Siliconix. Vishay purchased the remaining 20% of Siliconix shares in 2005. As the world's number-one brand of low-voltage power MOSFETs (metal-oxide semiconductor field-effect transistors), Vishay Siliconix products play a key role in making handheld and portable electronic systems operate more efficiently from smaller and lighter battery packs. Vishay Siliconix milestones include the first analog switch, the first analog multiplexer, the first small-outline power MOSFET (LITTLE FOOT®), and the first power MOSFETs built on Trench technology (TrenchFET®). Vishay Siliconix power ICs focus on delivering the optimal and appropriate level of integration for power management and conversion. The Vishay Siliconix product portfolio now also features high-voltage planar MOSFETs acquired from International Rectifier.
Conclusion
The Vishay Siliconix SI2301BDS-T1-GE3 Power MOSFET is a top-tier component, offering exceptional performance in power management, switching applications, and more. Its efficient design, compact packaging, and fast switching capabilities make it an excellent choice for engineers looking to optimize their designs.
