Kioxia Unveils 332-Layer NAND Flash with 33% Faster Speed

Kioxia, a leading Japanese chip manufacturer, has announced the development of next-generation NAND flash technology, offering both increased storage capacity and a 33% improvement in interface speed. This innovation is expected to meet the growing demand from AI-driven data centers.

Compared to the currently mass-produced 8th generation 218-layer NAND technology, Kioxia's new 10th generation 332-layer technology boosts data storage bit density by 59%. In a joint statement with its U.S. partner, SanDisk, Kioxia revealed that the new NAND flash will consume less power, achieving a 10% increase in input power efficiency and a 34% boost in output power efficiency.

Manufactured in Japan, the new NAND flash technology does not yet have a specific release timeline. Kioxia is joining the competition with other companies that are also developing NAND flash solutions with over 300 layers.

NAND flash, used for long-term storage, improves performance through stacked memory cells. However, rising device costs remain a significant challenge. Kioxia is exploring new manufacturing methods, including the production of wafers with separate memory cells and controllers (responsible for managing read and write operations), which are then bonded together.

Additionally, Kioxia is working on its 9th generation NAND flash. The company plans to combine existing memory cell technologies with new advancements to further enhance read and write performance.