Samsung 4nm Yield Hits 40%, Powers HBM4

Samsung Electronics has reached a new milestone in the high-bandwidth memory (HBM) space by applying its advanced foundry technology to the logic chips used in sixth-generation HBM4. According to industry sources, the logic chips manufactured with Samsung's 4nm process have achieved a stable test production yield, offering new momentum for Samsung's development and future mass production of 12-layer HBM4—an area where the company has traditionally lagged behind competitors.

Reports indicate that the test production yield of these 4nm-based logic chips has already surpassed 40%. One semiconductor expert noted, “Achieving a 40% yield in initial test production is a solid starting point that allows us to move forward with business plans. Typically, foundry yields start around 10% and gradually improve as mass production ramps up.”

In the current HBM3E market (the fifth generation of HBM), Samsung trails behind SK hynix and Micron. To catch up, the company is now accelerating efforts in HBM4 logic chip production. These chips leverage fine-process foundry technology, not only enhancing overall performance but also enabling flexible customization to meet diverse application requirements in the evolving “custom HBM” market.

The success of Samsung's HBM4 initiative now hinges on its memory division's ability to advance 1c DRAM—a 10nm-class sixth-generation memory. The 12-layer HBM4 product will integrate this high-performance DRAM with the newly developed logic chip. If Samsung can stabilize the mass production of 1c DRAM, it could secure a critical edge in HBM4 performance.

An industry insider added, “The remaining challenge for Samsung lies in ensuring stable integration of DRAM with HBM stacks and optimizing packaging technologies.”