Samsung Expands 1c DRAM Capacity to Close HBM4 Gap

HBM4 has emerged as the next key battleground in the DRAM industry, and Samsung is stepping up its efforts to close the gap with current market leader SK Hynix through large-scale investments. According to a report by ZDNet Korea, Samsung is planning to expand the production of its sixth-generation 10nm-class 1c DRAM technology at its Hwaseong and Pyeongtaek facilities in South Korea. These investments are expected to begin by the end of this year.

While competitors like SK Hynix and Micron have adopted fifth-generation 10nm-class 1b DRAM technology as the foundation for their HBM4 solutions, Samsung is taking a more aggressive approach by betting on the more advanced 1c DRAM. This strategic move reflects Samsung's confidence in improving yield rates for 1c DRAM manufacturing.

In addition, Samsung is reportedly considering converting the Hwaseong Line 17 from 1z DRAM (third-generation 10nm-class) to 1c DRAM technology by the end of 2025, aiming to further expand its production capacity.

Earlier this year, Samsung launched its first 1c DRAM production line at the Pyeongtaek P4 campus, targeting a monthly output of 30,000 wafers. If expansion continues smoothly, the company anticipates increasing monthly capacity to 40,000 wafers.

In related developments, the Chosun Ilbo reported that Samsung has achieved over 40% yield in trial production of 4nm logic chips—crucial components for 12-layer stacked HBM4—highlighting progress in advanced chip integration.

According to market research firm TrendForce, driven by robust demand, total HBM shipments are expected to exceed 30 billion GB by 2026. HBM4 is projected to surpass HBM3e in the second half of 2026, becoming the mainstream solution in high-performance memory technologies.