Micron Unveils 6th-Gen 10nm-Class LPDDR5X DRAM

Recently, Micron Technology announced the industry's first LPDDR5X DRAM built on its sixth-generation 10nm-class process node, named 1γ (1-gamma). With a data transfer rate of up to 10.7Gbps (10667MT/s), the new memory sets a performance benchmark in the mobile DRAM market. Compared to its predecessor, the 1β node, the 1γ LPDDR5X offers a 20% reduction in power consumption—making it ideal for next-generation mobile applications that demand both speed and efficiency.

Another key advancement lies in its physical design: the 1γ LPDDR5X DRAM module has a thickness of just 0.61mm, which is 14% thinner than the previous 1β version and 6% thinner than comparable solutions on the market. This ultra-slim profile enhances design flexibility for ultra-thin and foldable smartphones, helping manufacturers push the boundaries of modern mobile device form factors.

The 1γ process is also Micron's first DRAM node to integrate EUV (Extreme Ultraviolet Lithography) technology, previously introduced in its DDR5 memory products. This cutting-edge fabrication technique allows for improved scalability, density, and manufacturing efficiency.

Micron has already begun sampling 16GB packaged versions of the 1γ LPDDR5X DRAM to select partners, with plans to offer capacities ranging from 8GB to 32GB. Commercial adoption is expected in flagship smartphones starting in 2026.