BLF188XRU: Features, Specs & More
In the world of RF power amplification, performance, reliability, and thermal resilience matter. That's where the Ampleon BLF188XRU stands out. Engineered for high-power RF transmission, this LDMOS transistor delivers exceptional efficiency and ruggedness across a wide frequency range. In this comprehensive article, we'll delve into the intricacies of the BLF188XRU, uncovering its definition, key features, specifications, applications, and a closer look at its manufacturer.
Catalog
BLF188XRU's Overview
The BLF188XRU is a high-power RF field-effect transistor (FET) developed by Ampleon, one of the leading names in RF semiconductor solutions. This component is based on laterally diffused metal-oxide-semiconductor (LDMOS) technology and is designed for pulsed RF operation in the 10 MHz to 600 MHz range. It features a dual common-source configuration with two N-channel elements per chip, enabling optimal efficiency and output power performance.
Key Features
Let's delve into the standout features that make the BLF188XRU a standout in the world of electronics:
· Delivers up to 1400 watts of output power.
· Provides a typical power gain of 24.4 dB.
· Operates across a wide frequency range from 10 MHz to 600 MHz.
· Built using LDMOS technology for efficiency and thermal stability.
· Has a maximum drain-source voltage of 135V.
· Supports high VSWR (Voltage Standing Wave Ratio) tolerance up to 65.
· Features screw-mount packaging for robust mechanical integration.
· Comes in a 5-pin SOT-539A package designed for bulk installations.
Specifications
Now, let's take a closer look at the technical specifications that define the capabilities of the BLF188XRU:
Type | Parameter |
Configuration | Dual Common Source |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 2 |
Mode of Operation | Pulsed RF |
Process Technology | LDMOS |
Maximum Drain Source Voltage (V) | 135 |
Maximum Gate Source Voltage (V) | 11 |
Maximum Gate Threshold Voltage (V) | 2.25 |
Maximum VSWR | 65 |
Maximum Gate Source Leakage Current (nA) | 280 |
Maximum IDSS (uA) | 2.8 |
Maximum Drain Source Resistance (MOhm) | 80(Typ)@6V |
Typical Input Capacitance @ Vds (pF) | 534@50V |
Typical Reverse Transfer Capacitance @ Vds (pF) | 5.5@50V |
Typical Output Capacitance @ Vds (pF) | 212@50V |
Output Power (W) | 1400 |
Typical Power Gain (dB) | 24.4 |
Maximum Frequency (MHz) | 600 |
Minimum Frequency (MHz) | 10 |
Minimum Operating Temperature (°C) | -65 |
Maximum Operating Temperature (°C) | 225 |
Packaging | Bulk |
Mounting | Screw |
Package Height | 4.7(Max) |
Package Width | 10.29(Max) |
Package Length | 41.28(Max) |
PCB changed | 5 |
Supplier Package | SOT-539A |
Pin Count | 5 |
Applications
Thanks to its high power output and broad frequency support, the Ampleon BLF188XRU is ideally suited for:
· Industrial RF heating systems
· Medical RF applications
· Scientific instrumentation
· Broadcast transmitter systems, particularly in AM, FM, and VHF bands
BLF188XRU's Manufacturer
Created in 2015 and headquartered in the Netherlands, Ampleon is shaped by nearly 60 years of RF power leadership. The company envisions to advance society through innovative RF solutions based on GaN and LDMOS technologies. Ampleon is dedicated to being the partner of choice by delivering high-quality, high-performance RF products with its world-class talent. The portfolio offers flexibility in scaling design and production for any volume and addresses applications for 5G NR Infrastructure, Industrial, Scientific, Medical, Broadcast, Navigation and Safety Radio.
Conclusion
If your application demands high power, thermal robustness, and reliable RF performance, the Ampleon BLF188XRU is a smart choice. Its dual-channel LDMOS design, exceptional output power, and flexible mounting make it ideal for both commercial broadcasting and high-end industrial use.
