SI2304BDS-T1-GE3: Features, Specs & More
If you're working with electronics and power management circuits, selecting the right MOSFET can significantly impact your design's performance and reliability. The Vishay Siliconix SI2304BDS-T1-GE3 is a highly regarded N-channel power MOSFET, known for its robust specifications and compact form factor. In this comprehensive article, we'll delve into the intricacies of the SI2304BDS-T1-GE3, uncovering its definition, key features, specifications, applications, and a closer look at its manufacturer.
Catalog
SI2304BDS-T1-GE3's Manufacturer
SI2304BDS-T1-GE3's Overview
The SI2304BDS-T1-GE3 is a power MOSFET designed by Vishay, a leader in semiconductor components. It uses advanced TrenchFET technology to provide high efficiency and reliability. As an N-channel enhancement mode transistor, it controls current flow with a positive gate voltage, making it ideal for switching and amplification tasks in modern electronics.
Packaged in a compact 3-pin SOT-23 surface-mount device, it suits densely packed circuit boards where space is premium.
Key Features
Let's delve into the standout features that make the SI2304BDS-T1-GE3 a standout in the world of electronics:
· Operates at a maximum drain-source voltage of 30V ensuring moderate voltage tolerance for many circuits.
· Supports a continuous drain current of 2.6A, allowing for efficient current conduction.
· Built with TrenchFET process technology, enhancing switching speed and reducing on-resistance.
· Features a maximum gate-source voltage rating of ±20V to protect against gate damage.
· Offers low gate charge (2.6nC at 5V), which improves switching efficiency.
· Has a typical drain-source resistance of 70 milliohms at 10V, optimizing power loss.
· Operates reliably in harsh environments with a junction temperature range from -55°C to 150°C.
· Comes in a compact SOT-23 package with gull-wing leads for easy surface mounting.
· Exhibits fast switching times: typical rise time of 12.5ns and fall time of 15ns.
· Provides maximum power dissipation of 1.08W on PCB at room temperature.
Specifications
Now, let's take a closer look at the technical specifications that define the capabilities of the SI2304BDS-T1-GE3:
Type | Parameter |
Product Category | Power MOSFET |
Configuration | Single |
Process Technology | TrenchFET |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 30 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 3 |
Operating Junction Temperature (°C) | -55 to 150 |
Maximum Continuous Drain Current (A) | 2.6 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum IDSS (uA) | 0.5 |
Maximum Drain Source Resistance (MOhm) | 70@10V |
Typical Gate Charge @ Vgs (nC) | 2.6@5V|4.6@10V |
Typical Gate Charge @ 10V (nC) | 4.6 |
Typical Gate to Drain Charge (nC) | 1.15 |
Typical Gate to Source Charge (nC) | 0.8 |
Typical Input Capacitance @ Vds (pF) | 225@15V |
Typical Reverse Transfer Capacitance @ Vds (pF) | 28@15V |
Minimum Gate Threshold Voltage (V) | 1.5 |
Typical Output Capacitance (pF) | 50 |
Maximum Power Dissipation (mW) | 1080 |
Typical Fall Time (ns) | 15 |
Typical Rise Time (ns) | 12.5 |
Typical Turn-Off Delay Time (ns) | 19 |
Typical Turn-On Delay Time (ns) | 7.5 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Maximum Power Dissipation on PCB @ TC=25°C (W) | 1.08 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 10 |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 166 |
Typical Diode Forward Voltage (V) | 0.8 |
Typical Gate Plateau Voltage (V) | 3.7 |
Maximum Diode Forward Voltage (V) | 1.2 |
Minimum Gate Resistance (Ohm) | 0.6 |
Maximum Gate Resistance (Ohm) | 6 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 3.2 |
Mounting | Surface Mount |
Package Height | 1.02(Max) |
Package Width | 1.4(Max) |
Package Length | 3.04(Max) |
PCB changed | 3 |
Standard Package Name | SOT |
Supplier Package | SOT-23 |
Pin Count | 3 |
Lead Shape | Gull-wing |
* SI2304BDS-T1-GE3's Datasheet
Applications
This MOSFET is versatile and used in a range of electronic designs, including:
· Power management modules for portable electronics.
· Switching regulators and DC/DC converters.
· Load switching in battery-powered devices.
· Motor control circuits in small appliances.
· Signal switching and amplification in communication equipment.
· General-purpose switching in automotive electronics.
SI2304BDS-T1-GE3's Manufacturer
Siliconix was founded in 1962. In 1998, Vishay acquired the Semiconductor Business Group of TEMIC, which included 80% of Siliconix. Vishay purchased the remaining 20% of Siliconix shares in 2005. As the world's number-one brand of low-voltage power MOSFETs (metal-oxide semiconductor field-effect transistors), Vishay Siliconix products play a key role in making handheld and portable electronic systems operate more efficiently from smaller and lighter battery packs. Vishay Siliconix milestones include the first analog switch, the first analog multiplexer, the first small-outline power MOSFET (LITTLE FOOT®), and the first power MOSFETs built on Trench technology (TrenchFET®). Vishay Siliconix power ICs focus on delivering the optimal and appropriate level of integration for power management and conversion. The Vishay Siliconix product portfolio now also features high-voltage planar MOSFETs acquired from International Rectifier.
Conclusion
The Vishay Siliconix SI2304BDS-T1-GE3 MOSFET is a reliable and efficient solution for designers needing a compact power transistor. Its solid electrical performance, advanced trench process, and SOT-23 packaging make it ideal for a wide range of electronic applications. Understanding its features and specifications helps engineers make informed decisions and optimize circuit performance.
