MMBTA14LT1G: Features, Specs & More
When designing compact electronics with high current gain and reliable switching performance, choosing the right transistor is critical. One of the standout choices in the market today is the MMBTA14LT1G from onsemi—a trusted name in the semiconductor industry. In this comprehensive article, we'll delve into the intricacies of the MMBTA14LT1G, uncovering its definition, key features, specifications, applications, and a closer look at its manufacturer.
Catalog
MMBTA14LT1G's Overview
The MMBTA14LT1G is a Darlington-configured NPN bipolar junction transistor housed in a space-saving SOT-23 surface-mount package. Designed by onsemi, it is engineered to deliver very high current gain in compact electronics, making it suitable for amplification and switching applications in digital and analog circuits.
Key Features
Let's delve into the standout features that make the MMBTA14LT1G a standout in the world of electronics:
· Single NPN transistor with Darlington configuration
· Operates with a maximum collector-emitter voltage of 30V
· Supports up to 0.3A continuous DC collector current
· Delivers extremely high DC current gain up to 20,000
· Offers high gain-bandwidth of at least 125 MHz
· Compact 3-pin SOT-23 package for surface mount applications
· Low collector cut-off current of just 0.1 µA
· Reliable across wide temperature range (-55°C to 150°C)
· Maximum power dissipation of 300 mW
· Tape and reel packaging ideal for automated assembly
Specifications
Now, let's take a closer look at the technical specifications that define the capabilities of the MMBTA14LT1G:
Type | Parameter |
Type | NPN |
Configuration | Single |
Number of Elements per Chip | 1 |
Maximum Collector-Emitter Voltage (V) | 30 |
Maximum Collector Base Voltage (V) | 30 |
Maximum Emitter Base Voltage (V) | 10 |
Maximum Continuous DC Collector Current (A) | 0.3 |
Maximum Collector Cut-Off Current (uA) | 0.1 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Current Gain Bandwidth (MHz) | 125(Min) |
Maximum Collector-Emitter Saturation Voltage (V) | 1.5@0.1mA@100mA |
Minimum DC Current Gain | 10000@10mA@5V|20000@100mA@5V |
Maximum Power Dissipation (mW) | 300 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Mounting | Surface Mount |
Package Height | 0.94 |
Package Width | 1.3 |
Package Length | 2.9 |
PCB changed | 3 |
Standard Package Name | SOT |
Supplier Package | SOT-23 |
Pin Count | 3 |
Lead Shape | Gull-wing |
Applications
Thanks to its high current gain, small footprint, and thermal reliability, the MMBTA14LT1G finds usage across a wide range of electronics, including:
· Signal amplification in low-power circuits
· Relay and LED drivers in embedded systems
· Sensor interfacing in IoT devices
· Power management units in battery-operated gadgets
· Audio preamplifier stages in consumer electronics
· Switching circuits in compact PCBs where space is limited
MMBTA14LT1G's Manufacturer
ON Semiconductor, stylized in lowercase as "onsemi", stands at the forefront of technological innovation, driving advancements that power intelligent and energy-efficient systems worldwide. With a commitment to delivering cutting-edge solutions, ON Semiconductor provides a comprehensive portfolio of semiconductor products, spanning power management, analog, sensor, and connectivity solutions. Leveraging a legacy of over 20 years, the company has solidified its position as a trusted partner for industries ranging from automotive and industrial to consumer electronics and healthcare.
Conclusion
The onsemi MMBTA14LT1G is a dependable and efficient Darlington NPN transistor that balances high current gain with compact packaging. Its robust voltage and current ratings, combined with a wide temperature range, make it suitable for many low-power electronics applications.
