In the fast-evolving world of automotive and industrial electronics, reliability, compactness, and performance are not optional—they're essential. One such component that ticks all these boxes is the Nexperia PMBTA13,215, a high-gain NPN Darlington transistor that offers robust operation, small form factor, and automotive-grade quality assurance. In this comprehensive article, we'll delve into the intricacies of the PMBTA13,215, uncovering its definition, key features, specifications, applications, and a closer look at its manufacturer.
Catalog
The PMBTA13,215 is a single NPN Darlington transistor built for high-performance electronic applications. Manufactured by Nexperia, a trusted name in discrete semiconductors, this device offers 30V collector-emitter voltage, 0.5A collector current, and is qualified to AEC-Q101 standards, making it ideal for use in automotive systems and other harsh environments.
Let's delve into the standout features that make the PMBTA13,215 a standout in the world of electronics:
· The transistor is a Darlington NPN type with a single element per chip.
· It offers high current gain, up to 10,000 at 100mA and 5V.
· The device supports a maximum collector-emitter voltage of 30V.
· The continuous DC collector current is rated at 0.5A.
· Power dissipation is rated at 250mW, suitable for compact circuit designs.
· It operates within a wide temperature range from -65°C to 150°C.
· The collector-emitter saturation voltage is as low as 1.5V at 0.1mA and 100mA.
· With a typical current gain bandwidth of 125 MHz, it supports high-frequency operations.
· Packaged in a 3-pin SOT-23 surface-mount form, it is optimized for modern PCBs.
· It features low collector cut-off current, typically 0.1µA, ensuring low leakage.
Now, let's take a closer look at the technical specifications that define the capabilities of the PMBTA13,215:
Type | Parameter |
Type | NPN |
Configuration | Single |
Number of Elements per Chip | 1 |
Maximum Collector-Emitter Voltage (V) | 30 |
Maximum Collector Base Voltage (V) | 30 |
Maximum Emitter Base Voltage (V) | 10 |
Maximum Continuous DC Collector Current (A) | 0.5 |
Maximum Collector Cut-Off Current (uA) | 0.1 |
Typical Current Gain Bandwidth (MHz) | 125(Min) |
Maximum Collector-Emitter Saturation Voltage (V) | 1.5@0.1mA@100mA |
Minimum DC Current Gain | 10000@100mA@5V|5000@10mA@5V |
Maximum Power Dissipation (mW) | 250 |
Minimum Operating Temperature (°C) | -65 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Mounting | Surface Mount |
Package Height | 1(Max) |
Package Width | 1.4(Max) |
Package Length | 3(Max) |
PCB changed | 3 |
Standard Package Name | SOT |
Supplier Package | SOT-23 |
Pin Count | 3 |
Lead Shape | Gull-wing |
The PMBTA13,215 is designed with flexibility and reliability in mind. Its high gain and low leakage characteristics make it perfect for:
· High input impedance preamplifiers
· Sensor interfaces
· Switching regulators
· Automotive control modules
· Audio signal amplification
Nexperia, a leading force in the electronic components industry, stands as a testament to innovation and expertise. Born out of NXP Semiconductors in 2017, Nexperia swiftly emerged as an independent company, building on a legacy of over 60 years of semiconductor excellence. With a rich history rooted in technological advancements, Nexperia has established itself as a global powerhouse, specializing in the design and manufacturing of essential electronic components. Renowned for its commitment to quality, reliability, and cutting-edge solutions, Nexperia continues to shape the future of electronics, providing components that drive advancements in various industries, from automotive to consumer electronics.
The Nexperia PMBTA13,215 is not just another transistor—it's a high-performance, automotive-grade component engineered for reliability and efficiency. With strong electrical characteristics, thermal tolerance, and high gain, it's a preferred choice for modern electronic design, from compact sensors to robust automotive systems.