SQM120N06-3M5L_GE3: Features, Specs & More
In today’s electronics landscape, selecting the right MOSFET is crucial for efficient power management and reliable operation, especially in demanding automotive environments. The Vishay SQM120N06-3M5L_GE3 power MOSFET stands out as a robust solution designed to meet these challenges. In this comprehensive article, we'll delve into the intricacies of the SQM120N06-3M5L_GE3, uncovering its definition, key features, specifications, applications, and a closer look at its manufacturer.
Catalog
SQM120N06-3M5L_GE3's Manufacturer
SQM120N06-3M5L_GE3's Overview
The SQM120N06-3M5L_GE3 is a power MOSFET manufactured by Vishay Siliconix. It is an N-channel enhancement mode transistor designed for high-current switching applications. Built to withstand harsh automotive conditions, it comes with AEC-Q101 qualification, ensuring automotive-grade reliability and quality. The device features a surface-mount D2PAK (TO-263) package with three pins (two + tab) for easy PCB mounting.
Key Features
Let's delve into the standout features that make the SQM120N06-3M5L_GE3 a standout in the world of electronics:
· Maximum Drain-Source Voltage (Vds) of 60V
· Maximum Continuous Drain Current (Id) of 120A
· Low Drain-Source On-Resistance (Rds(on)) of 3.5 mΩ at 10V gate drive
· Typical Gate Charge of 220 nC at 10V
· Operating Junction Temperature range from -55°C to 175°C
· AEC-Q101 automotive qualification for enhanced reliability
· Fast switching times: 19 ns turn-on delay and 83 ns turn-off delay
· Package dimensions optimized for thermal dissipation (D2PAK / TO-263)
· Surface-mount gull-wing leads for automated assembly
Specifications
Now, let's take a closer look at the technical specifications that define the capabilities of the SQM120N06-3M5L_GE3:
Type | Parameter |
Product Category | Power MOSFET |
Configuration | Single |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 60 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 2.5 |
Operating Junction Temperature (°C) | -55 to 175 |
Maximum Continuous Drain Current (A) | 120 |
Maximum Drain Source Resistance (MOhm) | 3.5@10V |
Typical Gate Charge @ Vgs (nC) | 220@10V |
Typical Gate Charge @ 10V (nC) | 220 |
Typical Input Capacitance @ Vds (pF) | 11755@25V |
Maximum Power Dissipation (mW) | 375000 |
Typical Fall Time (ns) | 35 |
Typical Rise Time (ns) | 23 |
Typical Turn-Off Delay Time (ns) | 83 |
Typical Turn-On Delay Time (ns) | 19 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 175 |
Supplier Temperature Grade | Automotive |
Maximum Positive Gate Source Voltage (V) | 20 |
Typical Diode Forward Voltage (V) | 0.8 |
Maximum Diode Forward Voltage (V) | 1.5 |
Mounting | Surface Mount |
Package Height | 4.83(Max) |
Package Width | 9.65(Max) |
Package Length | 10.41(Max) |
PCB changed | 2 |
Tab | Tab |
Standard Package Name | TO-263 |
Supplier Package | D2PAK |
Pin Count | 3 |
Lead Shape | Gull-wing |
* SQM120N06-3M5L_GE3's Datasheet
Applications
This MOSFET is ideal for high-performance switching applications in the automotive sector. Its robust specifications make it suitable for:
· Electric vehicle (EV) power management systems
· DC-DC converters and voltage regulators
· Motor control circuits in automotive and industrial devices
· Battery management systems (BMS)
· High-current switching in power supplies
· General automotive electronics requiring high reliability
SQM120N06-3M5L_GE3's Manufacturer
Siliconix was founded in 1962. In 1998, Vishay acquired the Semiconductor Business Group of TEMIC, which included 80% of Siliconix. Vishay purchased the remaining 20% of Siliconix shares in 2005. As the world's number-one brand of low-voltage power MOSFETs (metal-oxide semiconductor field-effect transistors), Vishay Siliconix products play a key role in making handheld and portable electronic systems operate more efficiently from smaller and lighter battery packs. Vishay Siliconix milestones include the first analog switch, the first analog multiplexer, the first small-outline power MOSFET (LITTLE FOOT®), and the first power MOSFETs built on Trench technology (TrenchFET®). Vishay Siliconix power ICs focus on delivering the optimal and appropriate level of integration for power management and conversion. The Vishay Siliconix product portfolio now also features high-voltage planar MOSFETs acquired from International Rectifier.
Conclusion
The Vishay SQM120N06-3M5L_GE3 MOSFET is a powerful, reliable, and efficient solution for demanding automotive and industrial power applications. Its high current capacity, low on-resistance, fast switching speeds, and wide operating temperature range make it a go-to device for engineers designing robust electronics.
