SQ4917EY-T1_GE3: Features, Specs & More
In the world of automotive electronics, power management components must meet strict standards for efficiency, reliability, and durability. The Vishay / Siliconix SQ4917EY-T1_GE3 exemplifies these qualities as a high-performance P-Channel Power MOSFET designed for demanding automotive applications. In this comprehensive article, we'll delve into the intricacies of the SQ4917EY-T1_GE3, uncovering its definition, key features, specifications, applications, and a closer look at its manufacturer.
Catalog
SQ4917EY-T1_GE3's Manufacturer
SQ4917EY-T1_GE3's Overview
The Vishay SQ4917EY-T1_GE3 is a dual P-Channel MOSFET built on TrenchFET technology. It supports a maximum drain-source voltage of 60V and a continuous drain current of 8A, making it suitable for power switching in automotive circuits. Packaged in an 8-pin SOIC (Small Outline Integrated Circuit), it offers a compact yet robust solution for surface-mount applications.
Key Features
Let's delve into the standout features that make the SQ4917EY-T1_GE3 a standout in the world of electronics:
· Supports a maximum drain-source voltage of 60V.
· Can handle continuous drain current up to 8A.
· Qualified to AEC-Q101 standards for automotive reliability.
· Incorporates TrenchFET process technology for low on-resistance.
· Operates across a wide temperature range from -55°C to 175°C.
· Packaged in a compact 8-Pin SOIC N with gull-wing leads for surface mounting.
· Offers a low drain-source resistance of 48 mΩ at 10V gate drive.
· Features a typical gate charge of 43.4 nC at 10V.
· Fast switching performance with 35 ns turn-off delay time.
Specifications
Now, let's take a closer look at the technical specifications that define the capabilities of the SQ4917EY-T1_GE3:
Type | Parameter |
Product Category | Power MOSFET |
Configuration | Dual Dual Drain |
Process Technology | TrenchFET |
Channel Mode | Enhancement |
Channel Type | P |
Number of Elements per Chip | 2 |
Maximum Drain Source Voltage (V) | 60 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 2.5 |
Maximum Continuous Drain Current (A) | 8 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum IDSS (uA) | 1 |
Maximum Drain Source Resistance (MOhm) | 48@10V |
Typical Gate Charge @ Vgs (nC) | 43.4@10V |
Typical Gate Charge @ 10V (nC) | 43.4 |
Typical Input Capacitance @ Vds (pF) | 1530@30V |
Maximum Power Dissipation (mW) | 5000 |
Typical Fall Time (ns) | 6 |
Typical Rise Time (ns) | 11 |
Typical Turn-Off Delay Time (ns) | 35 |
Typical Turn-On Delay Time (ns) | 11 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 175 |
Supplier Temperature Grade | Automotive |
Packaging | Tape and Reel |
Mounting | Surface Mount |
Package Height | 1.55(Max) |
Package Width | 4(Max) |
Package Length | 5(Max) |
PCB changed | 8 |
Standard Package Name | SO |
Supplier Package | SOIC N |
Pin Count | 8 |
Lead Shape | Gull-wing |
Applications
The SQ4917EY-T1_GE3 is well-suited for:
· Automotive power management systems
· DC-DC converters in vehicles
· Motor control circuits
· Battery management systems (BMS)
· Load switches for safety-critical automotive circuits
SQ4917EY-T1_GE3's Manufacturer
Siliconix was founded in 1962. In 1998, Vishay acquired the Semiconductor Business Group of TEMIC, which included 80% of Siliconix. Vishay purchased the remaining 20% of Siliconix shares in 2005. As the world's number-one brand of low-voltage power MOSFETs (metal-oxide semiconductor field-effect transistors), Vishay Siliconix products play a key role in making handheld and portable electronic systems operate more efficiently from smaller and lighter battery packs. Vishay Siliconix milestones include the first analog switch, the first analog multiplexer, the first small-outline power MOSFET (LITTLE FOOT®), and the first power MOSFETs built on Trench technology (TrenchFET®). Vishay Siliconix power ICs focus on delivering the optimal and appropriate level of integration for power management and conversion. The Vishay Siliconix product portfolio now also features high-voltage planar MOSFETs acquired from International Rectifier.
Conclusion
The Vishay SQ4917EY-T1_GE3 stands out as a robust P-Channel MOSFET designed specifically for the rigors of automotive applications. With its high voltage handling, efficient switching, and AEC-Q101 qualification, this MOSFET delivers dependable performance for power control and management solutions.
