SQD50N10-8M9L_GE3: Features, Specs & More
If you're working in the automotive or power electronics field, reliable MOSFETs are critical to your designs. The Vishay / Siliconix SQD50N10-8M9L_GE3 is a robust N-channel power MOSFET that meets stringent automotive standards. In this comprehensive article, we'll delve into the intricacies of the SQD50N10-8M9L_GE3, uncovering its definition, key features, specifications, applications, and a closer look at its manufacturer.
Catalog
SQD50N10-8M9L_GE3's Manufacturer
SQD50N10-8M9L_GE3's Overview
The SQD50N10-8M9L_GE3 is a trench-gate power MOSFET designed for high-efficiency switching in automotive environments. It is an N-channel enhancement mode transistor built using advanced TrenchFET technology. This MOSFET is housed in a TO-252AA package and carries the important AEC-Q101 certification, ensuring automotive-grade reliability.
Key Features
Let's delve into the standout features that make the SQD50N10-8M9L_GE3 a standout in the world of electronics:
· It supports a maximum drain-to-source voltage of 100V, suitable for many automotive power circuits.
· The device can continuously handle a drain current of up to 50A, ideal for high current applications.
· It boasts a low drain-source on-resistance of 8.9 milliohms at 10V gate drive for efficient conduction.
· The MOSFET has a gate threshold voltage of approximately 2.5V, balancing switching speed and drive requirements.
· Typical gate charge is 46 nanocoulombs at 10V, enabling fast switching and reduced losses.
· It operates reliably in a wide temperature range from -55°C to 175°C.
· The package is a compact 3-pin TO-252AA surface-mount design, facilitating easy PCB integration.
· It includes a tab for efficient heat dissipation, which is crucial for automotive applications.
· The maximum power dissipation rating is 136W, ensuring durability under heavy load.
· The transistor exhibits fast switching characteristics, with rise times around 12ns and fall times near 120ns.
· The maximum gate-to-source voltage rating is ±20V, allowing safe operation within control voltage limits.
Specifications
Now, let's take a closer look at the technical specifications that define the capabilities of the SQD50N10-8M9L_GE3:
Type | Parameter |
Product Category | Power MOSFET |
Configuration | Single |
Process Technology | TrenchFET |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 100 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 2.5 |
Maximum Continuous Drain Current (A) | 50 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum IDSS (uA) | 1 |
Maximum Drain Source Resistance (MOhm) | 8.9@10V |
Typical Gate Charge @ Vgs (nC) | 46@10V |
Typical Gate Charge @ 10V (nC) | 46 |
Typical Input Capacitance @ Vds (pF) | 2340@25V |
Maximum Power Dissipation (mW) | 136000 |
Typical Fall Time (ns) | 120 |
Typical Rise Time (ns) | 12 |
Typical Turn-Off Delay Time (ns) | 95 |
Typical Turn-On Delay Time (ns) | 12 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 175 |
Supplier Temperature Grade | Automotive |
Mounting | Surface Mount |
Package Height | 2.38(Max) mm |
Package Width | 6.22(Max) mm |
Package Length | 6.73(Max) mm |
PCB changed | 2 |
Tab | Tab |
Standard Package Name | TO |
Supplier Package | TO-252AA |
Pin Count | 3 |
* SQD50N10-8M9L_GE3's Datasheet
Applications
This MOSFET is tailored for automotive and industrial power applications where reliability and efficiency are paramount. Common uses include:
· DC-DC converters in automotive power management systems.
· Motor control circuits in electric vehicles and industrial machines.
· Battery management systems requiring robust switching elements.
· High-current relay replacements and load switching.
· Power supplies and inverters in harsh environments.
SQD50N10-8M9L_GE3's Manufacturer
Siliconix was founded in 1962. In 1998, Vishay acquired the Semiconductor Business Group of TEMIC, which included 80% of Siliconix. Vishay purchased the remaining 20% of Siliconix shares in 2005. As the world's number-one brand of low-voltage power MOSFETs (metal-oxide semiconductor field-effect transistors), Vishay Siliconix products play a key role in making handheld and portable electronic systems operate more efficiently from smaller and lighter battery packs. Vishay Siliconix milestones include the first analog switch, the first analog multiplexer, the first small-outline power MOSFET (LITTLE FOOT®), and the first power MOSFETs built on Trench technology (TrenchFET®). Vishay Siliconix power ICs focus on delivering the optimal and appropriate level of integration for power management and conversion. The Vishay Siliconix product portfolio now also features high-voltage planar MOSFETs acquired from International Rectifier.
Conclusion
The Vishay SQD50N10-8M9L_GE3 is a powerful, reliable MOSFET designed for automotive-grade applications. Its robust voltage and current ratings combined with low resistance and fast switching make it ideal for power electronics engineers aiming for efficiency and longevity. Its compliance with AEC-Q101 and wide operating temperature range assures performance in the most challenging environments.
