MT53E1G32D2FW-046 WT:B: Features, Specs & More
In today’s fast-evolving electronics landscape, memory components play a crucial role in defining device performance and efficiency. The Micron MT53E1G32D2FW-046 WT:B is a cutting-edge mobile LPDDR4 SDRAM chip designed to meet the demanding requirements of modern mobile and embedded applications. In this comprehensive article, we'll delve into the intricacies of the MT53E1G32D2FW-046 WT:B, uncovering its definition, key features, specifications, applications, and a closer look at its manufacturer.
Catalog
MT53E1G32D2FW-046 WT:B's Overview
MT53E1G32D2FW-046 WT:B's Manufacturer
MT53E1G32D2FW-046 WT:B's Overview
The MT53E1G32D2FW-046 WT:B is a mobile Low Power Double Data Rate 4 (LPDDR4) synchronous dynamic RAM chip. It offers a high-density 32-gigabit (Gb) capacity organized as 1 gigabit by 32 bits (1Gx32). Engineered with advanced CMOS process technology, it supports low voltage operation to reduce power consumption. Packaged in a 200-pin Thin Fine-pitch Ball Grid Array (TFBGA), this chip is optimized for compact, high-speed mobile and embedded system designs.
Key Features
Let's delve into the standout features that make the MT53E1G32D2FW-046 WT:B a standout in the world of electronics:
· Supports mobile LPDDR4 SDRAM standard for high data rates and power efficiency.
· Offers a large 32Gb memory density for demanding applications.
· Organized as 1G by 32 bits to ensure wide data bus width.
· Operates at a maximum clock frequency of 4266 MHz for rapid data access.
· Contains 8 internal banks to enable parallel memory operations.
· Provides a maximum access time of 3.5 nanoseconds for fast response.
· Interfaces via LVSTL signaling for robust electrical performance.
· Supports dual voltage domains at 1.1V and 1.8V typical supply voltages.
· Features a compact 200-pin TFBGA package with a low profile of 0.69mm.
· Functions reliably across a temperature range of -25°C to 85°C.
· Surface mount technology (SMT) compatible for automated PCB assembly.
Specifications
Now, let's take a closer look at the technical specifications that define the capabilities of the MT53E1G32D2FW-046 WT:B:
Type | Parameter |
DRAM Type | Mobile LPDDR4 SDRAM |
Chip Density (bit) | 32G |
Organization | 1Gx32 |
Number of Internal Banks | 8 |
Number of Words per Bank | 128M |
Number of Bits/Word (bit) | 32 |
Data Bus Width (bit) | 32 |
Maximum Clock Rate (MHz) | 4266 |
Maximum Access Time (ns) | 3.5 |
Address Bus Width (bit) | 19 |
Process Technology | CMOS |
Interface Type | LVSTL |
Minimum Operating Supply Voltage (V) | 1.06|1.7 |
Typical Operating Supply Voltage (V) | 1.1|1.8 |
Maximum Operating Supply Voltage (V) | 1.17|1.95 |
Operating Current (mA) | 400 |
Minimum Operating Temperature (°C) | -25 |
Maximum Operating Temperature (°C) | 85 |
Number of I/O Lines (bit) | 32 |
Mounting | Surface Mount |
Package Height | 0.69 |
Package Width | 10 |
Package Length | 14.5 |
PCB changed | 200 |
Standard Package Name | BGA |
Supplier Package | TFBGA |
Pin Count | 200 |
Lead Shape | Ball |
* MT53E1G32D2FW-046 WT:B's Datasheet
Applications
The MT53E1G32D2FW-046 WT:B DRAM chip is widely used in:
· Smartphones and tablets requiring high-speed, low-power memory.
· Portable multimedia devices with stringent power budgets.
· Embedded systems including automotive infotainment.
· Wearable electronics demanding compact and efficient memory solutions.
· Networking devices where fast and reliable data buffering is critical.
· Consumer electronics that benefit from fast memory access and low heat dissipation.
MT53E1G32D2FW-046 WT:B's Manufacturer
Micron Technology is a global leader in semiconductor manufacturing, specializing in memory and storage solutions. Founded in Boise, Idaho, in 1978, Micron has grown to become one of the largest and most influential players in the technology industry. The company is renowned for its innovation in NAND and DRAM memory technologies, providing a wide range of products that power computing, networking, and storage applications. With a commitment to advancing technology and driving industry breakthroughs, Micron has established itself as a key player in the development of cutting-edge memory solutions for various electronic devices and systems.
Conclusion
The Micron MT53E1G32D2FW-046 WT:B is a top-tier mobile LPDDR4 DRAM chip that combines high density, fast clock speeds, and low power consumption. Its robust specifications and versatile applications make it a go-to choice for designers and engineers developing next-generation mobile and embedded systems.
