Samsung to Unveil HBM4 Memory by End of October

According to recent media reports, Samsung is accelerating the development of its next-generation HBM4 memory, marking a major step forward in its semiconductor roadmap. The company has achieved a significant yield improvement for its sixth-generation DRAM (1c DRAM), with production yield rates now approaching the target level of 80%.

As the core foundation of Samsung's HBM4, this breakthrough in 1c DRAM yield represents a crucial milestone that strengthens the company's readiness for HBM4 mass production and reinforces its position in the high-performance memory market.

Samsung had previously lagged behind SK hynix in the HBM3E and early HBM4 race due to yield challenges in the 1c DRAM process. To overcome this bottleneck, the company implemented major design optimizations in 2024—refining peripheral circuitry and resolving capacitor leakage issues, which have now led to a stable production yield close to mass-production standards.

With these improvements, Samsung plans to officially unveil its HBM4 memory at the Samsung Tech Week 2025 event (October 27–31) and may start delivering engineering samples later this year. If mass production proceeds smoothly, Samsung is expected to reassert its competitiveness in the AI high-bandwidth memory sector, leveraging its advanced 1c DRAM process and in-house 4nm logic integration to challenge SK hynix's current market lead.