VIS Signs GaN Process Licensing Deal With TSMC

According to an announcement on January 28, Vanguard International Semiconductor (VIS) said it has signed a technology licensing agreement with TSMC covering both high-voltage (650V) and low-voltage (80V) gallium nitride (GaN) process technologies.

The partnership is expected to speed up VIS's development of next-generation GaN power devices aimed at applications such as data centers, automotive electronics, industrial control systems, and energy management. By securing this license, VIS will extend its silicon-based GaN (GaN-on-Si) process into high-voltage applications and build a more complete GaN-on-Si platform.

Combined with its existing GaN-on-QST process platform, VIS says it will become the only foundry able to offer two different GaN process technologies on different substrates at the same time. The portfolio will support a full range of solutions, from low voltage (below 200V) to high voltage (650V) and even ultra-high voltage (up to 1200V), reinforcing the company's position in high-efficiency power conversion.

As conventional silicon processes approach their performance limits, GaN is increasingly seen as a key material for next-generation power electronics due to its high efficiency, high power density, and compact form factor. VIS is building out GaN process technologies spanning 15V to 1200V, with the newly licensed platform designed to integrate smoothly with its existing manufacturing flows. Process validation will take place on mature 8-inch wafer production lines to ensure stability and high yield.

Development work is expected to begin in early 2026, with volume production targeted for the first half of 2028. VIS General Manager Silver Kuei said the agreement reflects ongoing collaboration with TSMC and highlights VIS's long-term strategy in compound semiconductors, helping the company respond faster to growing demand for high-efficiency power conversion solutions.