HBM4 Showdown: Samsung vs SK hynix in 16-Layer Packaging

According to reports, Samsung Electronics and SK hynix have both secured 16-layer stacking technology for sixth-generation high-bandwidth memory (HBM4) and are now capable of mass production. Although the two Korean chipmakers have reached a similar milestone, they are taking different technical paths. Samsung relies on its Thermo-Compression Non-Conductive Film (TC-NCF) process, while SK hynix has adopted Advanced MR-MUF (Molded Underfill) packaging.

During the 2025 fourth-quarter earnings briefing, Samsung Memory Vice President Kim Jae-joon confirmed that the company's TC-NCF-based 16-layer HBM4 packaging has reached a production-ready level and can meet customer schedules. Industry observers in Korea interpret this as a sign that Samsung has achieved economically viable yields in its 10-nanometer-class sixth-generation 1c DRAM process for HBM4. The sector generally considers yields above 60 percent as the threshold for profitable volume production.

SK hynix has also completed preparations for 16-layer HBM4 manufacturing. Sources close to the company say its technology platform and capacity are ready to respond quickly to client requirements using 10-nanometer-class fifth-generation (1b) DRAM. However, real market demand for 16-layer products remains limited, and both companies acknowledge that 12-layer HBM4 will continue to dominate near-term orders.

Kim Jae-joon noted that, with sample shipments of the next-generation 12-layer HBM4E planned for 2026, there is currently no urgent need to ramp 16-layer output. SK hynix echoed this view, adding that production can be accelerated as soon as demand becomes clearer.

In the performance race, Samsung has achieved the industry’s fastest 11.7Gbps transfer speed using its 1c process. Even so, Korean analysts expect SK hynix to secure more than half of the initial HBM4 allocations from major AI processor makers, citing its stable yield performance as the key factor behind its leading position.

SK hynix reports yields of 80–90 percent for its current HBM3E lineup and aims to bring HBM4 to a similar level through its in-house packaging technology. Samsung, by contrast, is believed to be running at roughly 50–60 percent yield on 1c DRAM for HBM, with final packaged yields potentially lower. Company insiders suggest the rate has yet to break through the 70 percent mark.

Market forecasts indicate that SK hynix could capture over 50 percent of the HBM4 segment, while Samsung may reach a 30–40 percent share. If Samsung succeeds in lifting HBM4 yields above 80 percent in 2026, its performance advantages could help it close the gap quickly in this fast-growing memory arena.