Infineon to Build World’s First 12-Inch GaN Wafer Fab

According to an announcement on October 27, Infineon Technologies plans to establish Europe’s first large-scale production facility for next-generation gallium nitride (GaN) power semiconductors based on 300mm (12-inch) wafers. The project will expand the company’s manufacturing capabilities and improve production efficiency through the adoption of larger wafer technology.

As part of the initiative, Infineon plans to invest approximately €1.1 billion by 2034 to upgrade its existing cleanroom facilities at its Villach site in Austria. The new production facility is scheduled to begin operations by the end of 2027.

The transition from 200mm (8-inch) to 300mm wafers is expected to significantly increase manufacturing productivity. A 300mm wafer can produce approximately 2.3 times as many chips as a 200mm wafer, while the larger wafer area also provides opportunities to improve manufacturing processes and operational efficiency.

The European Commission has approved €319 million in state aid for Infineon’s expansion project in Villach. Austria’s economic authorities are expected to formally fulfill the funding commitment within the applicable timeframe.

The investment marks a significant step in expanding Europe’s GaN power semiconductor manufacturing capacity. By adopting 300mm wafer technology, Infineon aims to improve production efficiency and support the growing demand for power semiconductors used in applications such as power conversion, energy management, electric mobility, and industrial electronics.