Samsung Develops 4F2 DRAM for Sub-10nm, Expects Increased Q2 Chip Shipments

According to South Korean media outlet The Elec, Samsung Electronics has recently formed a development team within its semiconductor research center to mass-produce 4F2 DRAM. The company aims to apply the 4F2 DRAM cell structure to DRAM processes below 10 nanometers, which is expected to face the limits of linewidth reduction with current technology.

If the research on the 4F2 DRAM cell structure is successful at Samsung, the chip die area can be reduced by approximately 30% compared to the existing 6F2 DRAM cell structure, without changing the node. This reduction in die area would push the limits of linewidth reduction. The 4F2 structure is a unit structure technology that the DRAM industry failed to commercialize about 10 years ago, reportedly due to various technological challenges. Data indicates that compared to 8F2, 6F2 can reduce the area by 25-30%.

Recently, several semiconductor and securities industry insiders revealed that Samsung Electronics is expecting a quarter-on-quarter increase of approximately 15%-20% in its DRAM chip shipments for the second quarter, reversing the downward trend of around 10% in the first quarter. SK Hynix is forecasted to experience a quarter-on-quarter increase of 30%-50% in DRAM chip shipments for the second quarter, surpassing the market consensus of 20%. Analysts indicate that as all three major manufacturers have started reducing production, the demand for memory chips is expected to rebound in the third quarter of 2023, alleviating the issue of oversupply. The annual growth rate of DRAM production is projected to be only 5% in 2023.