STMicroelectronics: Mass Production of PowerGaN

August 3, 2023 – STMicroelectronics, a pioneering force in semiconductor technology, has proudly unveiled a significant milestone through its official social media channel. The company has initiated full-scale manufacturing of its cutting-edge PowerGaN HEMT (High Electron Mobility Transistor) devices, designed to streamline and optimize power conversion systems.

These innovative STPOWER™ GaN transistors leverage Gallium Nitride (GaN) technology, ushering in a new era of heightened efficiency across a spectrum of applications including wall plug adapters, lighting systems, industrial power units, renewable energy solutions, and electric mobility.

A standout among the debut offerings is the duo of industrial-grade 650V normally-off G-HEMT™ transistors – the SGT120R65AL and SGT65R65AL. Housed within the compact PowerFLAT 5x6 HV surface mount package, these transistors deliver impressive current ratings of 15A and 25A, with typical on-resistance (RDS(on)) values of 75mΩ and 49mΩ at 25°C. Both models, the SGT120R65AL and SGT65R65AL, are now commercially available, elegantly presented within the PowerFLAT 5x6 HV packaging.

STMicroelectronics' strategic focus on G-HEMT devices underscores a decisive shift towards GaN wide bandgap technology, positioning power conversion systems at the vanguard of efficiency and performance. As part of its forward-looking vision, STMicroelectronics envisions GaN as a catalyst for novel power conversion topologies, enabling unprecedented levels of energy efficiency while curtailing power consumption.

In the imminent months, STMicroelectronics is poised to introduce an array of pioneering PowerGaN products, including automotive-grade components and a diversified range of power packaging solutions. Among the anticipated releases are the PowerFLAT 8x8 DSC and LFPAK 12x12 high-power packaging formats, underscoring STMicroelectronics' unwavering commitment to propelling the realm of power electronics into new horizons.