Infineon CoolSiC 650V MOSFET: Advanced Electronics

Infineon, a leader in cutting-edge technology, has just released its game-changing SiC CoolSiC MOSFET 650V. This innovation comes packaged in the optimized TO-LL format and is set to transform a wide array of applications, from server SMPS and telecom infrastructure to energy storage systems and battery solutions.

The CoolSiC 650V trench power SiC MOSFET offers a range of customizable options to suit various needs. Built to the industry-standard TO-LL package, it's designed for minimal parasitic inductance, enabling high-frequency switching, reduced losses, efficient heat management, and seamless automated assembly.

Infineon emphasizes that the compact design optimizes circuit board space, allowing system designers to achieve exceptional power density. Crafted for reliability even in demanding environments, the CoolSiC MOSFET 650V is ideal for applications that require repeated hard commutation.

By utilizing XT interconnect technology, thermal performance is enhanced through lower resistance and impedance. Additionally, the device boasts a gate threshold voltage of over 4V, ensuring resilience against parasitic conduction. Its robust body diode and market-leading gate oxide (GOX) contribute to an impressively low FIT (failure-in-time) rate, enhancing overall reliability.

While traditional practice suggests using 0V gate-source cutoff voltage (V GS(off)) for simplified driver circuits, this new product line accommodates a wide V GS voltage drive range, spanning from -5V (off) to 23V (on). This versatility ensures user-friendly operation and compatibility with other SiC MOSFETs and standard MOSFET gate driver ICs. With high reliability, reduced system complexity, and streamlined automated assembly, this innovation aims to lower costs and accelerate time-to-market.