GaN Power Transistor Breakthrough by Transphorm

Transphorm, Inc. (Nasdaq: TGAN) has unveiled a groundbreaking feat with profound implications for the realm of electronic components. Leveraging their proprietary technology, the company has achieved an exceptional Short-Circuit Withstand Time (SCWT) of up to 5 microseconds on Gallium Nitride (GaN) power transistors. This landmark accomplishment not only represents an industry first but also serves as a significant milestone, underscoring Transphorm's leadership in the field.

This achievement underscores the inherent capacity of Transphorm's GaN devices to meet the stringent short-circuit resistance requirements crucial for high-reliability power inverters. These inverters find application in a range of critical sectors including servo motors, industrial motors, and automotive power transmission systems. Traditionally reliant on Silicon IGBTs or Silicon Carbide (SiC) MOSFETs, these applications are witnessing a transformation driven by the advancements of GaN technology. The projected Total Addressable Market (TAM) for GaN in these sectors is anticipated to surpass $3 billion within the next five years.

It's noteworthy that this pioneering endeavor has received the support of Yaskawa Electric Corporation, a renowned strategic partner of Transphorm, and a global frontrunner in the domains of medium- and low-voltage drives, servo systems, machine controllers, and industrial robotics.

GaN's ascendancy can be attributed to its superior attributes, including heightened efficiency and a more compact form factor. The burgeoning potential of GaN as a power conversion technology for servo systems is unmistakable. However, its integration necessitates rigorous endurance testing, particularly in withstanding short-circuit events. When such faults arise, the GaN device must seamlessly persist under extreme conditions characterized by high currents and voltages. In certain instances, system fault detection triggers operation cessation, with the device persevering through the ensuing challenges.

In essence, Transphorm's feat in extending Short-Circuit Withstand Time on GaN power transistors holds multifaceted significance. Beyond its immediate technological impact, it signals a compelling advancement in the landscape of power conversion solutions, with far-reaching applications across diverse industries.