Mitsubishi Teams Up with Nexperia for SiC Power Semiconductors

Recently, Mitsubishi Electric and Nexperia, a semiconductor company based in the Netherlands and a subsidiary of China's Wingtech Technology, announced a collaborative effort to develop high-efficiency Silicon Carbide (SiC) MOSFET discrete power semiconductors. This partnership aims to advance the energy efficiency and performance of SiC wide-bandgap semiconductors to new heights, addressing the growing demand for efficient discrete power semiconductors.

While the current chip supply volume is yet to be confirmed, it is anticipated that supplies will commence as early as 2023.

Nexperia, having recently divested the NWF wafer fab acquired in 2021, specializes in component development, production, and certification with decades of experience. Mitsubishi Electric, on the other hand, focuses on power semiconductors centered around "multiple discrete components combined," offering highly reliable SiC module products that are well-regarded in the industry.

Mark Roeloffzen, Senior Vice President and General Manager of the Bipolar Discretes Business Unit at Nexperia, stated, "Establishing a mutually beneficial strategic partnership with Mitsubishi Electric signifies a significant advancement for Nexperia in the field of Silicon Carbide technology. The synergy between Nexperia's high-quality standards and expertise in discrete products and packaging technology is expected to generate positive collaborative effects between the two companies, ultimately aiding customers in providing high-efficiency products in the industrial, automotive, and consumer markets."

Dr. Masayoshi Takemi, Executive Officer and Group President of Mitsubishi Electric's Semiconductor and Device Division, expressed, "Nexperia is a leading industry player with mature technology in the high-quality discrete semiconductor field. We are pleased to enter into a collaborative development agreement with them, leveraging the semiconductor technologies of both companies."