SIR873DP-T1-GE3: Features, Specs & More
Welcome to our guide where we delve into the intricacies of Vishay/Siliconix SIR873DP-T1-GE3, a cutting-edge component in the realm of electronics. In this comprehensive article, we'll delve into the intricacies of the SIR873DP-T1-GE3, uncovering its definition, key features, specifications, applications, and a closer look at its manufacturer.
Catalog
SIR873DP-T1-GE3's Manufacturer
SIR873DP-T1-GE3's Overview
At its core, the Vishay/Siliconix SIR873DP-T1-GE3 is a Trans MOSFET, specifically a P-Channel Power MOSFET. Equipped with a single quad drain triple source configuration and leveraging cutting-edge TrenchFET process technology, this component offers unparalleled performance in various electronics applications.
△ P-Channel MOSFET
Key Features
Let's delve into the standout features that make SIR873DP-T1-GE3 a game-changer:
· Utilizing TrenchFET technology, this MOSFET offers superior performance and efficiency.
· Designed as a Single Quad Drain Triple Source configuration, ensuring versatility in various applications.
· With a maximum drain source voltage of 150V, SIR873DP-T1-GE3 empowers your circuits with robustness.
· Capable of handling up to 37A of continuous drain current, this MOSFET ensures reliable power delivery.
· Operating efficiently in temperatures ranging from -55°C to 150°C, it adapts to diverse environmental conditions.
Specifications
Now, let's delve into the technical specifications that make the SIR873DP-T1-GE3 a standout choice for electronic projects:
Type | Parameter |
Product Category | Power MOSFET |
Configuration | Single Quad Drain Triple Source |
Process Technology | TrenchFET |
Channel Mode | Enhancement |
Channel Type | P |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 150 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 4 |
Operating Junction Temperature (°C) | -55 to 150 |
Maximum Continuous Drain Current (A) | 37 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum IDSS (uA) | 1 |
Maximum Drain Source Resistance (MOhm) | 47.5@10V |
Typical Gate Charge @ Vgs (nC) | 25@7.5V|31.8@10V |
Typical Gate Charge @ 10V (nC) | 31.8 |
Typical Gate to Drain Charge (nC) | 9.5 |
Typical Gate to Source Charge (nC) | 9.2 |
Typical Reverse Recovery Charge (nC) | 245 |
Typical Input Capacitance @ Vds (pF) | 1805@75V |
Typical Reverse Transfer Capacitance @ Vds (pF) | 14.5@75V |
Minimum Gate Threshold Voltage (V) | 2 |
Typical Output Capacitance (pF) | 332 |
Maximum Power Dissipation (mW) | 6250 |
Typical Fall Time (ns) | 9 |
Typical Rise Time (ns) | 7 |
Typical Turn-Off Delay Time (ns) | 28 |
Typical Turn-On Delay Time (ns) | 15 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Maximum Power Dissipation on PCB @ TC=25°C (W) | 6.25 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 50 |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 54 |
Typical Diode Forward Voltage (V) | 0.79 |
Typical Gate Plateau Voltage (V) | 5.5 |
Typical Reverse Recovery Time (ns) | 75 |
Maximum Diode Forward Voltage (V) | 1.1 |
Minimum Gate Resistance (Ohm) | 1.9 |
Maximum Gate Resistance (Ohm) | 6 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 9 |
Mounting | Surface Mount |
Package Height | 1.07(Max) |
Package Width | 5.89 |
Package Length | 4.9 |
PCB changed | 8 |
Supplier Package | PowerPAK SO EP |
Pin Count | 8 |
Lead Shape | No Lead |
Applications
The versatility of Vishay Siliconix SIR873DP-T1-GE3 opens doors to a wide range of applications including:
· Power Supplies: Delivering stable power output, ideal for various power supply designs.
· Motor Control: Ensuring precise control and efficient operation in motor control applications.
· LED Lighting: Facilitating efficient switching for LED drivers, enhancing lighting solutions.
· Inverters: Enabling efficient energy conversion in inverters for renewable energy systems.
· Industrial Automation: Enhancing reliability and performance in industrial automation systems.
SIR873DP-T1-GE3's Manufacturer
Siliconix was founded in 1962. In 1998, Vishay acquired the Semiconductor Business Group of TEMIC, which included 80% of Siliconix. Vishay purchased the remaining 20% of Siliconix shares in 2005. As the world's number-one brand of low-voltage power MOSFETs (metal-oxide semiconductor field-effect transistors), Vishay Siliconix products play a key role in making handheld and portable electronic systems operate more efficiently from smaller and lighter battery packs. Vishay Siliconix milestones include the first analog switch, the first analog multiplexer, the first small-outline power MOSFET (LITTLE FOOT®), and the first power MOSFETs built on Trench technology (TrenchFET®). Vishay Siliconix power ICs focus on delivering the optimal and appropriate level of integration for power management and conversion. The Vishay Siliconix product portfolio now also features high-voltage planar MOSFETs acquired from International Rectifier.
Conclusion
In conclusion, the Vishay / Siliconix SIR873DP-T1-GE3 stands as a testament to the relentless pursuit of excellence in the field of electronics. With its advanced features, robust design, and wide-ranging applications, this MOSFET unlocks a world of possibilities for engineers and enthusiasts alike.
