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000SCT50N120: Features, Specs & More
As a leading choice for applications requiring robust power switching, the SCT50N120 offers impressive specifications and key features that make it a go-to component for engineers and developers working with SiC technology. In this comprehensive article, we'll delve into the intricacies of the SCT50N120, uncovering its definition, key features, specifications, applications, and a closer look at its manufacturer.
Catalog
SCT50N120's Overview
The STMicroelectronics SCT50N120 is a single, N-channel silicon carbide (SiC) power MOSFET designed for high-voltage and high-current applications. It comes in a HIP-247 package with three leads and a tab, offering superior thermal management and power dissipation.
Key Features
Let's delve into the standout features that make the SCT50N120 a standout in the world of electronics:
· High Drain-Source Voltage: The SCT50N120 boasts a maximum drain-source voltage of 1200V, making it suitable for high-voltage applications.
· High Continuous Drain Current: It offers a maximum continuous drain current of 65A, ensuring reliable performance in high-current applications.
· Exceptional Operating Temperature Range: With an operating temperature range of -55°C to 200°C, the SCT50N120 is designed to withstand harsh environments.
· Low On-State Resistance: The low on-state resistance (69mOhm @ 20V) minimizes power loss, enhancing efficiency and performance.
· High Gate Source Voltage: The maximum gate-source voltage of 25V provides flexibility in driving the MOSFET effectively.
· Fast Switching Speed: The typical reverse recovery time of 55ns facilitates fast switching, allowing for efficient operation in dynamic applications.
· Robust Packaging: The HIP-247 package ensures proper heat dissipation and reliability, making it ideal for industrial applications.
Specifications
Now, let's take a closer look at the technical specifications that define the capabilities of the SCT50N120:
Type | Parameter |
Product Category | Power MOSFET |
Material | SiC |
Configuration | Single |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 1200 |
Maximum Gate Source Voltage (V) | 25 |
Operating Junction Temperature (°C) | -55 to 200 |
Maximum Continuous Drain Current (A) | 65 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum IDSS (uA) | 100 |
Maximum Drain Source Resistance (MOhm) | 69@20V |
Typical Gate Charge @ Vgs (nC) | 122@20V |
Typical Gate to Drain Charge (nC) | 35 |
Typical Gate to Source Charge (nC) | 19 |
Typical Reverse Recovery Charge (nC) | 230 |
Typical Input Capacitance @ Vds (pF) | 1900@400V |
Typical Reverse Transfer Capacitance @ Vds (pF) | 30@400V |
Minimum Gate Threshold Voltage (V) | 1.8 |
Typical Output Capacitance (pF) | 170 |
Maximum Power Dissipation (mW) | 318000 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 200 |
Supplier Temperature Grade | Industrial |
Packaging | Tube |
Maximum Positive Gate Source Voltage (V) | 25 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 130 |
Typical Diode Forward Voltage (V) | 3.5 |
Typical Gate Plateau Voltage (V) | 8 |
Typical Reverse Recovery Time (ns) | 55 |
Typical Gate Threshold Voltage (V) | 3 |
Mounting | Through Hole |
Package Height | 20.15(Max) |
Package Width | 5.15(Max) |
Package Length | 15.75(Max) |
PCB changed | 3 |
Tab | Tab |
Standard Package Name | HIP-247 |
Supplier Package | HIP-247 |
Pin Count | 3 |
Lead Shape | Through Hole |
Applications
The SCT50N120's robust features make it an excellent choice for a variety of applications, including:
· Power Inverters: Ideal for converting DC to AC power in solar and other renewable energy systems.
· Motor Drives: Suitable for controlling and driving motors in industrial and automotive applications.
· Power Supplies: Can be used in high-efficiency power supply units for various electronic devices.
· High-Voltage Switching: Offers fast switching speed and low on-state resistance for high-voltage applications.
SCT50N120's Manufacturer
STMicroelectronics, often abbreviated as ST, is a global semiconductor manufacturer with a long-standing reputation for producing innovative and high-quality electronic components. With headquarters in Geneva, Switzerland, and a strong international presence, STMicroelectronics is a leading player in the semiconductor industry. They specialize in designing and manufacturing a wide range of semiconductor devices, including microcontrollers, sensors, power management solutions, and more. STMicroelectronics is trusted by industries worldwide, including automotive, consumer electronics, industrial, and telecommunications, for their cutting-edge technology and commitment to advancing the field of electronics.
Conclusion
In summary, the STMicroelectronics SCT50N120 is a powerful and efficient SiC power MOSFET that excels in high-voltage and high-current applications. Its robust features, exceptional specifications, and reliable performance make it an excellent choice for engineers and developers working on demanding projects.
