ASML Reveals 2030 Hyper NA EUV Roadmap for 0.2nm!

According to EETimes, ASML recently revealed the technical blueprint for its Hyper NA EUV lithography machine, which is still in the early stages of development and is expected to launch by 2030. Martin van den Brink, former President and CTO of ASML and now a company advisor, announced at the imec ITF World event in May 2024 that ASML has successfully printed 8nm line widths using its experimental High NA EUV (EXE:5200) lithography machine. This achievement surpasses the previous record of 10nm line widths set by ASML in early April and also includes some degree of overlap coverage.

Martin van den Brink further disclosed that ASML plans to officially introduce the Hyper NA EUV lithography machine around 2030, featuring a numerical aperture (NA) of 0.75 for higher resolution patterning and smaller transistor features. In comparison, the High NA EUV lithography machine has an NA of 0.55, while the standard EUV lithography machine has an NA of 0.33. Van den Brink stated, "In ten years, we will have a unified EUV platform encompassing Low NA, High NA, and Hyper NA, improving both cost and delivery time."

ASML's latest lithography machine roadmap indicates that the 0.75NA Hyper NA EUV lithography machine will have the prefix "HXE," with the first model expected around 2030.

Regarding production efficiency, ASML's newly shipped High NA EUV lithography machine (EXE:5000) currently produces 150 wafers per hour. By around 2026, this speed is expected to increase to approximately 200 wafers per hour with the introduction of the second-generation High NA EUV lithography machine (EXE:5200B). The third-generation High NA EUV lithography machine (EXE:5400) is anticipated around 2028, and the fourth generation (EXE:5600), featuring high-transmission, low-PFR flexible illuminators, is expected around 2030. By 2035, the new High NA EUV lithography machines are projected to achieve a production capacity of 300 wafers per hour, doubling the current capacity of the EXE:5000.

In terms of supported process nodes, ASML's roadmap, disclosed by Martin van den Brink, shows that the current 0.3NA standard EUV lithography machines can support 2nm mass production until 2025. Beyond this, multi-patterning technology will be required, reaching its limit with 1.4nm production by 2027. The 0.55NA High NA EUV lithography machine will support 1nm production until 2029, and with multi-patterning, it can reach the 0.5nm (5 angstrom) node by 2033. Further advancements will likely require the 0.75NA Hyper NA EUV lithography machine, potentially supporting process nodes below 0.2nm (2 angstroms).

It is important to note that although the diameter of a silicon atom is approximately 1 angstrom, the process node names mentioned here are equivalent metrics, not actual physical measurements. For instance, the 2 angstrom process node corresponds to metal pitches of about 16-12nm, which will further shrink to 14-10nm for nodes below 2 angstroms.

Leading chip manufacturers using EUV lithography machines, such as Samsung, Micron, and SK Hynix, are also considering High NA EUV lithography machines. TSMC is expected to adopt this technology early, with ASML hinting that it may ship High NA EUV lithography machines to TSMC by the end of 2024.

Ronse stated, "High NA should extend through the 2nm to 1.4nm, 10 angstrom, and even 7 angstrom process nodes," adding that Hyper NA will then become dominant.