IPP083N10N5AKSA1: Features, Specs & More
In the realm of power electronics, the Infineon IPP083N10N5AKSA1 is a standout component, renowned for its robust capabilities and efficient design. In this comprehensive article, we'll delve into the intricacies of the IPP083N10N5AKSA1, uncovering its definition, key features, specifications, applications, and a closer look at its manufacturer.
Catalog
IPP083N10N5AKSA1's Manufacturer
IPP083N10N5AKSA1's Overview
The Infineon IPP083N10N5AKSA1 is a single-channel, N-channel MOSFET utilizing OptiMOS 5 process technology. It features an enhancement mode operation, ensuring low on-state resistance and high reliability in diverse power supply and motor control applications.
Key Features
Let's delve into the standout features that make the IPP083N10N5AKSA1 a standout in the world of electronics:
· Operates in enhancement mode, facilitating low gate drive requirements and ease of use in circuit design.
· Capable of handling a maximum continuous drain current of 73A, making it suitable for high-power applications.
· With a maximum drain-source voltage of 100V, it provides robustness and reliability in various voltage environments.
· Offers a low drain-source on-state resistance of 8.3 mΩ at 10V gate drive, ensuring efficient power management and minimal heat dissipation.
· Features a typical gate charge of 30nC at 10V, enabling fast switching and reducing switching losses.
· Operates reliably from -55°C to 175°C, suitable for extreme environmental conditions.
Specifications
Now, let's take a closer look at the technical specifications that define the capabilities of the IPP083N10N5AKSA1:
Type | Parameter |
Product Category | Power MOSFET |
Configuration | Single |
Process Technology | OptiMOS 5 |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 100 |
Maximum Gate Source Voltage (V) | 20 |
Maximum Gate Threshold Voltage (V) | 3.8 |
Maximum Continuous Drain Current (A) | 73 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum IDSS (uA) | 1 |
Maximum Drain Source Resistance (MOhm) | 8.3@10V |
Typical Gate Charge @ Vgs (nC) | 30@10V |
Typical Gate Charge @ 10V (nC) | 30 |
Typical Input Capacitance @ Vds (pF) | 2100@50V |
Maximum Power Dissipation (mW) | 100000 |
Typical Fall Time (ns) | 5 |
Typical Rise Time (ns) | 5 |
Typical Turn-Off Delay Time (ns) | 21 |
Typical Turn-On Delay Time (ns) | 13 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 175 |
Packaging | Tube |
Mounting | Through Hole |
Package Height | 9.45(Max) |
Package Width | 4.57(Max) |
Package Length | 10.36(Max) |
PCB changed | 3 |
Tab | Tab |
Standard Package Name | TO |
Supplier Package | TO-220 |
Pin Count | 3 |
Lead Shape | Through Hole |
* IPP083N10N5AKSA1's Datasheet
Applications
The IPP083N10N5AKSA1 MOSFET finds widespread application across various domains due to its high reliability and performance efficiency. Key applications include:
· Power Supplies: Used in switching regulators and DC-DC converters.
· Motor Control: Facilitates efficient motor driving in industrial and automotive applications.
· Electronic Loads: Supports high-current switching applications.
· Inverters: Integral component in power inverters for renewable energy systems.
IPP083N10N5AKSA1's Manufacturer
Established in 1999, Infineon Technologies has emerged as a global leader in semiconductor solutions, pioneering innovations that power various industries worldwide. Headquartered in Neubiberg, Germany, the company has played a pivotal role in shaping the landscape of modern electronics. Infineon specializes in designing and manufacturing advanced semiconductor technologies, encompassing power management, automotive electronics, industrial applications, and security solutions.
Conclusion
The Infineon IPP083N10N5AKSA1 MOSFET stands as a testament to advanced semiconductor technology, offering superior performance in power management applications. With its robust design, high current handling capability, and wide operating temperature range, it meets the stringent demands of modern electronics.
