IKW30N60TFKSA1: Features, Specs & More
In the world of electronics, finding the right components for your projects is crucial for optimal performance and efficiency. One such component that stands out in various applications is the Infineon IKW30N60TFKSA1. In this comprehensive article, we'll delve into the intricacies of the IKW30N60TFKSA1, uncovering its definition, key features, specifications, applications, and a closer look at its manufacturer.
Catalog
IKW30N60TFKSA1's Overview
The Infineon IKW30N60TFKSA1 is a Transistor (IGBT) Chip designed with a focus on efficiency and reliability. It is a critical component in the field of power electronics, playing a vital role in controlling high power levels with minimal energy loss. The IGBT combines the best characteristics of both MOSFETs and BJTs, offering high input impedance and low on-state power dissipation.
Key Features
Let's delve into the standout features that make the IKW30N60TFKSA1 a standout in the world of electronics:
· With a maximum collector-emitter voltage of 600V, this IGBT chip can handle high-voltage operations effectively.
· It supports a continuous collector current of up to 45A, making it suitable for demanding applications.
· The chip has a maximum power dissipation of 187W, ensuring it can operate efficiently without overheating.
· It functions reliably within a wide operating temperature range of -40°C to 175°C.
· The typical collector-emitter saturation voltage is 1.5V, which helps in reducing power loss and improving efficiency.
· The maximum gate-emitter leakage current is only 0.1µA, ensuring minimal loss and higher performance.
Specifications
Now, let's take a closer look at the technical specifications that define the capabilities of the IKW30N60TFKSA1:
Type | Parameter |
Channel Type | N |
Configuration | Single |
Maximum Gate Emitter Voltage (V) | ±20 |
Maximum Collector-Emitter Voltage (V) | 600 |
Typical Collector Emitter Saturation Voltage (V) | 1.5 |
Maximum Continuous Collector Current (A) | 45 |
Maximum Gate Emitter Leakage Current (uA) | 0.1 |
Maximum Power Dissipation (mW) | 187 |
Minimum Operating Temperature (°C) | -40 |
Maximum Operating Temperature (°C) | 175 |
Packaging | Tube |
Mounting | Through Hole |
Package Height | 20.95 |
Package Width | 5.3 |
Package Length | 15.9 |
PCB changed | 3 |
Tab | Tab |
Standard Package Name | TO |
Supplier Package | TO-247 |
Pin Count | 3 |
Lead Shape | Through Hole |
Applications
The Infineon IKW30N60TFKSA1 is versatile and can be utilized in various applications, such as:
· Industrial Motor Drives: Its high current capacity and efficiency make it ideal for controlling industrial motors.
· Power Inverters: Perfect for converting DC to AC power in solar inverters and other renewable energy applications.
· Uninterruptible Power Supplies (UPS): Ensures reliable power delivery and management.
· Switch-Mode Power Supplies (SMPS): Suitable for high-efficiency power supply designs.
· Welding Machines: Reliable performance under high current conditions is crucial for welding applications.
IKW30N60TFKSA1's Manufacturer
Established in 1999, Infineon Technologies has emerged as a global leader in semiconductor solutions, pioneering innovations that power various industries worldwide. Headquartered in Neubiberg, Germany, the company has played a pivotal role in shaping the landscape of modern electronics. Infineon specializes in designing and manufacturing advanced semiconductor technologies, encompassing power management, automotive electronics, industrial applications, and security solutions.
Conclusion
The Infineon IKW30N60TFKSA1 is a robust and efficient IGBT chip designed to meet the demanding needs of various electronic applications. With its impressive specifications and the backing of a reputable manufacturer like Infineon Technologies, this component is a valuable addition to any project requiring high voltage and current handling capabilities.
