IPT60R102G7XTMA1: Features, Specs & More
In the ever-evolving world of electronics, selecting the right components is crucial for optimizing performance and efficiency. Infineon’s IPT60R102G7XTMA1, a high-performance Power MOSFET, is designed to meet the demanding requirements of modern electronic applications. In this comprehensive article, we'll delve into the intricacies of the IPT60R102G7XTMA1, uncovering its definition, key features, specifications, applications, and a closer look at its manufacturer.
Catalog
IPT60R102G7XTMA1's Manufacturer
IPT60R102G7XTMA1's Overview
The Infineon IPT60R102G7XTMA1 is a high-performance Power MOSFET that belongs to the CoolMOS G7 family. This N-channel MOSFET is designed for efficiency and reliability, making it an ideal choice for various power management applications. With a maximum drain-source voltage of 600V and a continuous drain current of 23A, it offers robust performance in demanding environments.
Key Features
Let's delve into the standout features that make the IPT60R102G7XTMA1 a standout in the world of electronics:
· With a maximum drain-source voltage of 600V, this MOSFET is suitable for high-voltage applications, ensuring safe and reliable performance.
· It can handle a maximum continuous drain current of 23A, making it ideal for high-power applications.
· The MOSFET features a low drain-source resistance (RDS(on)) of 102 mΩ at 10V, which minimizes power loss and enhances efficiency.
· With typical turn-on and turn-off delay times of 18ns and 60ns, respectively, the IPT60R102G7XTMA1 ensures rapid and efficient switching.
· It operates effectively across a wide temperature range (-55°C to 150°C) and offers a high maximum power dissipation of 141W.
Specifications
Now, let's take a closer look at the technical specifications that define the capabilities of the IPT60R102G7XTMA1:
Type | Parameter |
Product Category | Power MOSFET |
Configuration | Single Seven Source |
Process Technology | CoolMOS G7 |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 600 |
Maximum Gate Source Voltage (V) | 20 |
Maximum Gate Threshold Voltage (V) | 4 |
Maximum Continuous Drain Current (A) | 23 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum IDSS (uA) | 1 |
Maximum Drain Source Resistance (MOhm) | 102@10V |
Typical Gate Charge @ Vgs (nC) | 34@10V |
Typical Gate Charge @ 10V (nC) | 34 |
Typical Gate to Drain Charge (nC) | 12 |
Typical Input Capacitance @ Vds (pF) | 1320@400V |
Maximum Power Dissipation (mW) | 141000 |
Typical Fall Time (ns) | 4 |
Typical Rise Time (ns) | 5 |
Typical Turn-Off Delay Time (ns) | 60 |
Typical Turn-On Delay Time (ns) | 18 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Maximum Pulsed Drain Current @ TC=25°C (A) | 66 |
Mounting | Surface Mount |
* IPT60R102G7XTMA1's Datasheet
Applications
The versatile Infineon IPT60R102G7XTMA1 is designed for a wide range of applications, including:
· Power Management Systems: Ideal for use in high-efficiency power supplies and converters.
· Industrial Electronics: Suitable for motor control, automation, and other industrial applications requiring reliable and efficient power switching.
· Consumer Electronics: Used in high-performance devices such as LED drivers, chargers, and other consumer electronic products.
· Renewable Energy Systems: Applicable in solar inverters and other renewable energy technologies that require robust and efficient power components.
IPT60R102G7XTMA1's Manufacturer
Established in 1999, Infineon Technologies has emerged as a global leader in semiconductor solutions, pioneering innovations that power various industries worldwide. Headquartered in Neubiberg, Germany, the company has played a pivotal role in shaping the landscape of modern electronics. Infineon specializes in designing and manufacturing advanced semiconductor technologies, encompassing power management, automotive electronics, industrial applications, and security solutions.
Conclusion
The Infineon IPT60R102G7XTMA1 Power MOSFET is a powerful and efficient solution for a wide range of electronic applications. Its advanced features, combined with Infineon's renowned quality and reliability, make it a top choice for engineers and designers aiming to optimize performance and efficiency in their projects.
