Infineon Unveils World's First 12-Inch GaN Wafer Technology

Infineon Technologies recently announced that it has achieved a world-first breakthrough in producing GaN (Gallium Nitride) chips on 12-inch (300mm) wafers. This cutting-edge technology aims to meet the rapidly growing demand for power semiconductors used in high-energy applications, such as AI data centers and electric vehicles.

According to Infineon CEO Jochen Hanebeck, the GaN technology market is expected to reach a multi-billion-dollar scale by the end of this decade. Adam White, President of Power & Sensor Systems at Infineon, further confirmed that the first samples will be available to customers by Q4 2025.

The company emphasized that producing GaN chips on larger wafers increases efficiency, with 12-inch wafers accommodating 2.3 times more GaN chips compared to the industry-standard 8-inch (200mm) wafers. While most high-end processor chips are already manufactured on 12-inch wafers, the power semiconductor industry has primarily relied on 8-inch wafers.

GaN is gaining popularity as an alternative to silicon in chip manufacturing due to its superior efficiency, speed, lighter weight, and ability to operate at higher temperatures and voltages.

Infineon's recent acquisition of GaN Systems in October 2023 has spurred new ideas and innovations through the integration of both companies' R&D resources. This collaboration has led to significant advancements in GaN technology, with a rapid expansion of related product lines.

In addition to its focus on GaN, Infineon is also making strides in the silicon carbide (SiC) sector. In early August, the company began operations at its largest power semiconductor factory in Kulim, Malaysia. Once fully operational over the next five years, the factory is set to become the world's largest SiC manufacturing facility.