SIA466EDJ-T1-GE3: Features, Specs & More
In the dynamic world of electronics, choosing the right component is vital for achieving optimal circuit performance. One such high-performance component is the Vishay/Siliconix SIA466EDJ-T1-GE3. In this comprehensive article, we'll delve into the intricacies of the SIA466EDJ-T1-GE3, uncovering its definition, key features, specifications, applications, and a closer look at its manufacturer.
Catalog
SIA466EDJ-T1-GE3's Manufacturer
SIA466EDJ-T1-GE3's Overview
The Vishay SIA466EDJ-T1-GE3 is a high-performance N-Channel Power MOSFET that utilizes advanced TrenchFET technology. Designed for surface mounting, this MOSFET offers a compact form factor ideal for power-sensitive applications. With a maximum drain-source voltage of 20V and a continuous drain current capability of 25A, it is a reliable choice for DC/DC converters, power management systems, and load switches in smartphones and mobile computing devices.
Key Features
Let's delve into the standout features that make the SIA466EDJ-T1-GE3 a standout in the world of electronics:
· Capable of handling up to 25A of continuous drain current, making it suitable for high-load applications.
· Boasts a maximum drain-source resistance of 9.5 mΩ at 10V, reducing power loss and improving efficiency.
· Encased in a PowerPAK SC-70 package that is surface mountable, measuring just 2.05mm x 2.05mm.
· Fast turn-on and turn-off times of 15ns and 12ns, respectively, ensure efficient operation in high-frequency applications.
· Designed with a power dissipation of 3.5W on PCB at TC=25°C, supported by excellent thermal resistance.
Specifications
Now, let's take a closer look at the technical specifications that define the capabilities of the SIA466EDJ-T1-GE3:
Type | Parameter |
Product Category | Power MOSFET |
Configuration | Single Quad Drain |
Process Technology | TrenchFET |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 20 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 2.5 |
Maximum Continuous Drain Current (A) | 25 |
Maximum Gate Source Leakage Current (nA) | 30000 |
Maximum IDSS (uA) | 10 |
Maximum Drain Source Resistance (MOhm) | 9.5@10V |
Typical Gate Charge @ Vgs (nC) | 13@10V |
Typical Gate Charge @ 10V (nC) | 13 |
Typical Input Capacitance @ Vds (pF) | 620 |
Maximum Power Dissipation (mW) | 3500 |
Typical Fall Time (ns) | 20 |
Typical Rise Time (ns) | 73 |
Typical Turn-Off Delay Time (ns) | 12 |
Typical Turn-On Delay Time (ns) | 15 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 15.1 |
Maximum Power Dissipation on PCB @ TC=25°C (W) | 3.5 |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 80 |
Typical Diode Forward Voltage (V) | 0.8 |
Typical Gate Plateau Voltage (V) | 2.2 |
Typical Reverse Recovery Time (ns) | 22 |
Maximum Diode Forward Voltage (V) | 1.2 |
Minimum Gate Resistance (Ohm) | 0.2 |
Maximum Gate Resistance (Ohm) | 1.8 |
Mounting | Surface Mount |
Package Height | 0.75(Max) |
Package Width | 2.05 |
Package Length | 2.05 |
PCB changed | 6 |
Supplier Package | PowerPAK SC-70 |
Pin Count | 6 |
* SIA466EDJ-T1-GE3's Datasheet
Applications
The SIA466EDJ-T1-GE3 is highly versatile, with applications spanning across various sectors, particularly in mobile and computing technologies:
· Smartphones: Powers compact and efficient DC/DC converters, optimizing battery performance.
· Mobile Computing: Facilitates power management systems for energy efficiency and thermal stability.
· Load Switches: Acts as a high-reliability switch in power distribution circuits.
SIA466EDJ-T1-GE3's Manufacturer
Siliconix was founded in 1962. In 1998, Vishay acquired the Semiconductor Business Group of TEMIC, which included 80% of Siliconix. Vishay purchased the remaining 20% of Siliconix shares in 2005. As the world's number-one brand of low-voltage power MOSFETs (metal-oxide semiconductor field-effect transistors), Vishay Siliconix products play a key role in making handheld and portable electronic systems operate more efficiently from smaller and lighter battery packs. Vishay Siliconix milestones include the first analog switch, the first analog multiplexer, the first small-outline power MOSFET (LITTLE FOOT®), and the first power MOSFETs built on Trench technology (TrenchFET®). Vishay Siliconix power ICs focus on delivering the optimal and appropriate level of integration for power management and conversion. The Vishay Siliconix product portfolio now also features high-voltage planar MOSFETs acquired from International Rectifier.
Conclusion
The Vishay SIA466EDJ-T1-GE3 is a robust, high-performance N-Channel MOSFET suitable for demanding power management and load switching applications. With its efficient TrenchFET technology, compact packaging, and reliable thermal performance, this MOSFET is an exceptional addition to any power-sensitive electronic design.
