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STB6N80K5: Features, Specs & More

2024-12-03 16:10:26Mr.Ming
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STB6N80K5: Features, Specs & More

When it comes to high-performance power management in electronic circuits, MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are the cornerstone of many designs. Among the leading contenders in the market, STMicroelectronics' STB6N80K5 stands out as a robust N-channel Power MOSFET designed for switching applications. In this comprehensive article, we'll delve into the intricacies of the STB6N80K5, uncovering its definition, key features, specifications, applications, and a closer look at its manufacturer.

 

Catalog

STB6N80K5's Overview

Key Features

Specifications

Applications

STB6N80K5's Manufacturer

Conclusion

 

STB6N80K5's Overview

The STB6N80K5 is a single N-channel Power MOSFET from STMicroelectronics, utilizing SuperMESH technology to provide excellent performance for high-voltage switching applications. With a maximum drain-source voltage of 800V and continuous drain current of 4.5A, this device delivers exceptional efficiency, even in demanding environments. Its compact D2PAK package and surface-mount design make it an excellent choice for space-constrained applications.

 

Key Features

Let's delve into the standout features that make the STB6N80K5 a standout in the world of electronics:

· With a maximum drain-source voltage of 800V, this MOSFET is well-suited for high-voltage switching circuits.

· A typical gate charge of 7.5nC at 10V ensures quick switching times and lower power consumption.

· Designed with the D²PAK package, it efficiently dissipates heat, ensuring reliable performance in demanding applications.

· Operates between -55°C to 150°C, making it suitable for industrial-grade applications.

· Enhances energy efficiency by reducing switching losses and conduction losses.

 

Specifications

Now, let's take a closer look at the technical specifications that define the capabilities of the STB6N80K5:

Type

Parameter

Product Category

Power MOSFET

Configuration

Single

Process Technology

SuperMESH

Channel Mode

Enhancement

Channel Type

N

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

800

Maximum Gate Source Voltage (V)

30

Maximum Gate Threshold Voltage (V)

5

Maximum Continuous Drain Current (A)

4.5

Maximum Gate Source Leakage Current (nA)

10000

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

1600@10V

Typical Gate Charge @ Vgs (nC)

7.5@10V

Typical Gate Charge @ 10V (nC)

7.5

Typical Input Capacitance @ Vds (pF)

270@100V

Maximum Power Dissipation (mW)

85000

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Packaging

Tape and Reel

Supplier Temperature Grade

Industrial

Mounting

Surface Mount

Package Height

4.6(Max)

Package Width

9.35(Max)

Package Length

10.4(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-263

Supplier Package

D2PAK

Pin Count

3

Lead Shape

Gull-wing

 * STB6N80K5's Datasheet

 

Applications

The versatility of the STB6N80K5 makes it an excellent choice for a variety of high-voltage switching applications, including:

· Power Supplies: Used in the design of efficient DC-DC converters and inverters.

· Lighting Systems: Ideal for LED drivers and high-efficiency lighting solutions.

· Industrial Automation: Employed in motor drivers and industrial control systems.

· Consumer Electronics: Used in high-performance home appliances and HVAC systems.

 

STB6N80K5's Manufacturer

STMicroelectronics, often abbreviated as ST, is a global semiconductor manufacturer with a long-standing reputation for producing innovative and high-quality electronic components. With headquarters in Geneva, Switzerland, and a strong international presence, STMicroelectronics is a leading player in the semiconductor industry. They specialize in designing and manufacturing a wide range of semiconductor devices, including microcontrollers, sensors, power management solutions, and more. STMicroelectronics is trusted by industries worldwide, including automotive, consumer electronics, industrial, and telecommunications, for their cutting-edge technology and commitment to advancing the field of electronics.

 

Conclusion

The STMicroelectronics STB6N80K5 is a powerful and reliable solution for modern switching applications. Its advanced features, such as high voltage tolerance, low gate charge, and excellent thermal performance, make it a favorite among designers seeking efficiency and durability. Whether for industrial-grade projects or sophisticated power management systems, the STB6N80K5 is a MOSFET worth considering.

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