When it comes to high-performance power management in electronic circuits, MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are the cornerstone of many designs. Among the leading contenders in the market, STMicroelectronics' STB6N80K5 stands out as a robust N-channel Power MOSFET designed for switching applications. In this comprehensive article, we'll delve into the intricacies of the STB6N80K5, uncovering its definition, key features, specifications, applications, and a closer look at its manufacturer.
Catalog
The STB6N80K5 is a single N-channel Power MOSFET from STMicroelectronics, utilizing SuperMESH technology to provide excellent performance for high-voltage switching applications. With a maximum drain-source voltage of 800V and continuous drain current of 4.5A, this device delivers exceptional efficiency, even in demanding environments. Its compact D2PAK package and surface-mount design make it an excellent choice for space-constrained applications.
Let's delve into the standout features that make the STB6N80K5 a standout in the world of electronics:
· With a maximum drain-source voltage of 800V, this MOSFET is well-suited for high-voltage switching circuits.
· A typical gate charge of 7.5nC at 10V ensures quick switching times and lower power consumption.
· Designed with the D²PAK package, it efficiently dissipates heat, ensuring reliable performance in demanding applications.
· Operates between -55°C to 150°C, making it suitable for industrial-grade applications.
· Enhances energy efficiency by reducing switching losses and conduction losses.
Now, let's take a closer look at the technical specifications that define the capabilities of the STB6N80K5:
Type | Parameter |
Product Category | Power MOSFET |
Configuration | Single |
Process Technology | SuperMESH |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 800 |
Maximum Gate Source Voltage (V) | 30 |
Maximum Gate Threshold Voltage (V) | 5 |
Maximum Continuous Drain Current (A) | 4.5 |
Maximum Gate Source Leakage Current (nA) | 10000 |
Maximum IDSS (uA) | 1 |
Maximum Drain Source Resistance (MOhm) | 1600@10V |
Typical Gate Charge @ Vgs (nC) | 7.5@10V |
Typical Gate Charge @ 10V (nC) | 7.5 |
Typical Input Capacitance @ Vds (pF) | 270@100V |
Maximum Power Dissipation (mW) | 85000 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Supplier Temperature Grade | Industrial |
Mounting | Surface Mount |
Package Height | 4.6(Max) |
Package Width | 9.35(Max) |
Package Length | 10.4(Max) |
PCB changed | 2 |
Tab | Tab |
Standard Package Name | TO-263 |
Supplier Package | D2PAK |
Pin Count | 3 |
Lead Shape | Gull-wing |
The versatility of the STB6N80K5 makes it an excellent choice for a variety of high-voltage switching applications, including:
· Power Supplies: Used in the design of efficient DC-DC converters and inverters.
· Lighting Systems: Ideal for LED drivers and high-efficiency lighting solutions.
· Industrial Automation: Employed in motor drivers and industrial control systems.
· Consumer Electronics: Used in high-performance home appliances and HVAC systems.
STMicroelectronics, often abbreviated as ST, is a global semiconductor manufacturer with a long-standing reputation for producing innovative and high-quality electronic components. With headquarters in Geneva, Switzerland, and a strong international presence, STMicroelectronics is a leading player in the semiconductor industry. They specialize in designing and manufacturing a wide range of semiconductor devices, including microcontrollers, sensors, power management solutions, and more. STMicroelectronics is trusted by industries worldwide, including automotive, consumer electronics, industrial, and telecommunications, for their cutting-edge technology and commitment to advancing the field of electronics.
The STMicroelectronics STB6N80K5 is a powerful and reliable solution for modern switching applications. Its advanced features, such as high voltage tolerance, low gate charge, and excellent thermal performance, make it a favorite among designers seeking efficiency and durability. Whether for industrial-grade projects or sophisticated power management systems, the STB6N80K5 is a MOSFET worth considering.