IGW40N120H3FKSA1: Features, Specs & More
In the rapidly advancing world of electronics, power management plays a crucial role in ensuring the efficiency and reliability of systems. The Infineon Technologies IGW40N120H3FKSA1 is a highly efficient Insulated Gate Bipolar Transistor (IGBT) that serves a variety of industrial applications, offering superior performance in high voltage environments. This component is designed to cater to applications such as solar inverters, uninterruptible power supplies (UPS), and welding converters. In this comprehensive article, we'll delve into the intricacies of the IGW40N120H3FKSA1, uncovering its definition, key features, specifications, applications, and a closer look at its manufacturer.
Catalog
IGW40N120H3FKSA1's Manufacturer
IGW40N120H3FKSA1's Overview
The Infineon IGW40N120H3FKSA1 is a single-channel, N-channel IGBT chip featuring a 1200V collector-emitter voltage rating. It is engineered to meet the needs of high-voltage applications, making it ideal for systems that require efficient switching and reliable power handling.
This device operates with high efficiency and supports power dissipation of up to 483W, making it a suitable choice for power electronics that demand high switching frequencies and robustness under varied environmental conditions.
Key Features
Let's delve into the standout features that make the IGW40N120H3FKSA1 a standout in the world of electronics:
· This module can operate with a maximum voltage of 1200V, making it suitable for high-voltage systems.
· The IGW40N120H3FKSA1 can handle continuous collector currents of up to 80A, offering significant power handling capacity.
· It has a maximum power dissipation of 483W, ensuring effective heat management during operation.
· The module comes in a TO-247 package, which is ideal for through-hole mounting and easy integration into electronic circuits.
· The IGW40N120H3FKSA1 can operate in temperatures ranging from -40°C to 175°C, making it suitable for a variety of environments.
· With a maximum gate emitter leakage current of 0.6µA, the module offers excellent performance stability.
Specifications
Now, let's take a closer look at the technical specifications that define the capabilities of the IGW40N120H3FKSA1:
Type | Parameter |
Channel Type | N |
Configuration | Single |
Maximum Collector-Emitter Voltage (V) | 1200 |
Maximum Gate Emitter Voltage (V) | ±20 |
Typical Collector Emitter Saturation Voltage (V) | 2.05 |
Maximum Continuous Collector Current (A) | 80 |
Maximum Gate Emitter Leakage Current (uA) | 0.6 |
Maximum Power Dissipation (mW) | 483 |
Minimum Operating Temperature (°C) | -40 |
Maximum Operating Temperature (°C) | 175 |
Packaging | Tube |
Mounting | Through Hole |
Package Height | 21.1(Max) |
Package Width | 5.16(Max) |
Package Length | 16.03(Max) |
PCB changed | 3 |
Tab | Tab |
Standard Package Name | TO |
Supplier Package | TO-247 |
Pin Count | 3 |
Lead Shape | Through Hole |
* IGW40N120H3FKSA1's Datasheet
Applications
The Infineon IGW40N120H3FKSA1 is a versatile IGBT with applications across several critical sectors:
· Solar Inverters: Efficient power conversion and management in renewable energy systems.
· Uninterruptible Power Supplies (UPS): Ensures consistent and reliable power in critical systems that demand continuous operation.
· Welding Converters: Used in welding machinery for high-efficiency and low thermal loss during the welding process.
· High-Frequency Converters: Supports converters that operate at high switching frequencies for applications like motor drives and industrial controls.
IGW40N120H3FKSA1's Manufacturer
Established in 1999, Infineon Technologies has emerged as a global leader in semiconductor solutions, pioneering innovations that power various industries worldwide. Headquartered in Neubiberg, Germany, the company has played a pivotal role in shaping the landscape of modern electronics. Infineon specializes in designing and manufacturing advanced semiconductor technologies, encompassing power management, automotive electronics, industrial applications, and security solutions.
Conclusion
The Infineon IGW40N120H3FKSA1 IGBT is an exceptional component for high-efficiency, high-power applications. With its ability to handle high voltages and currents, combined with low power loss and wide operational temperature range, it is perfect for industries ranging from renewable energy to industrial automation. Infineon’s commitment to innovation ensures that products like the IGW40N120H3FKSA1 are built to last and perform reliably in demanding conditions.
