FS800R07A2E3B31BOSA1: Features, Specs & More
In today's advanced automotive electronics, power efficiency and durability are paramount. The Infineon FS800R07A2E3B31BOSA1 stands out as a robust Insulated Gate Bipolar Transistor (IGBT) module engineered to meet stringent automotive standards. In this comprehensive article, we'll delve into the intricacies of the FS800R07A2E3B31BOSA1, uncovering its definition, key features, specifications, applications, and a closer look at its manufacturer.
Catalog
FS800R07A2E3B31BOSA1's Overview
FS800R07A2E3B31BOSA1's Manufacturer
FS800R07A2E3B31BOSA1's Overview
The FS800R07A2E3B31BOSA1 is an advanced N-channel IGBT module from Infineon Technologies. It features a hybrid 33-pin configuration, optimized for automotive-grade performance. Built on Field Stop and Trench technology, this device offers excellent switching characteristics and power handling. It is compliant with the automotive standard AEC-Q101, ensuring its reliability under harsh conditions.
Key Features
Let's delve into the standout features that make the FS800R07A2E3B31BOSA1 a standout in the world of electronics:
· The module supports a maximum collector-emitter voltage of 650V.
· It provides a continuous collector current rating of up to 700A.
· Typical collector-emitter saturation voltage is approximately 1.3V, indicating efficient conduction.
· Maximum power dissipation capacity reaches 1550 milliwatts.
· The gate-emitter voltage withstands up to ±20V.
· Operating temperature range spans from -40°C to 150°C.
· It features a 33-pin HYBRID2-1 package with a screw mounting design.
· The compact package dimensions are 216mm in length, 100mm in width, and 28.5mm in height.
· Maximum gate emitter leakage current is extremely low, rated at 0.4 microamps.
Specifications
Now, let's take a closer look at the technical specifications that define the capabilities of the FS800R07A2E3B31BOSA1:
Type | Parameter |
Technology | Field Stop|Trench |
Channel Type | N |
Configuration | Hex |
Maximum Collector-Emitter Voltage (V) | 650 |
Typical Collector Emitter Saturation Voltage (V) | 1.3 |
Maximum Gate Emitter Voltage (V) | ±20 |
Maximum Power Dissipation (mW) | 1550 |
Maximum Continuous Collector Current (A) | 700 |
Maximum Gate Emitter Leakage Current (uA) | 0.4 |
Minimum Operating Temperature (°C) | -40 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tray |
Mounting | Screw |
Package Height | 28.5(Max) |
Package Width | 100 |
Package Length | 216 |
PCB changed | 33 |
Supplier Package | HYBRID2-1 |
Pin Count | 33 |
* FS800R07A2E3B31BOSA1's Datasheet
Applications
This IGBT module is particularly designed for automotive power electronics, such as:
· Electric and hybrid vehicle inverters.
· DC-DC converters in automotive powertrains.
· Motor drives requiring high current and voltage ratings.
· Power management systems demanding AEC-Q101 compliance for quality and safety.
· Industrial motor control where robust and efficient switching is essential.
FS800R07A2E3B31BOSA1's Manufacturer
Established in 1999, Infineon Technologies has emerged as a global leader in semiconductor solutions, pioneering innovations that power various industries worldwide. Headquartered in Neubiberg, Germany, the company has played a pivotal role in shaping the landscape of modern electronics. Infineon specializes in designing and manufacturing advanced semiconductor technologies, encompassing power management, automotive electronics, industrial applications, and security solutions.
Conclusion
The Infineon FS800R07A2E3B31BOSA1 IGBT module combines high current capacity, robust voltage handling, and automotive-grade reliability. Its advanced field-stop trench technology and compact packaging make it an ideal choice for high-performance automotive and industrial power electronics.
