Samsung HBM4E to Reach 3.25TB/s by 2027

According to reports, Samsung Electronics is pushing the limits of high-performance memory, setting a bold target for its next-generation High Bandwidth Memory — HBM4E — to achieve data transfer speeds exceeding 3TB per second by 2027. The company aims to boost each pin's data rate to over 13Gbps, peaking at 3.25TB/s, which is around 2.5 times faster than the current HBM3E standard.

The announcement came on October 14 at the Open Compute Project (OCP) Global Summit 2025 in San Jose, where Samsung revealed that HBM4E will feature 2,048 I/O pins and deliver more than double the power efficiency of HBM3E, which currently runs at 3.9 pJ/bit.

This marks the first official update from Samsung since the ISSCC 2025 conference in San Francisco, where the company initially set its HBM4E bandwidth goal at 10Gbps per pin (2.5TB/s). However, with NVIDIA pressing memory makers to enhance bandwidth for its upcoming AI accelerator "Vera Rubin," Samsung and its competitors — SK hynix and Micron — have accelerated development.

Under JEDEC's standard, HBM4 is defined to run at 8Gbps per pin, equating to 2TB/s total bandwidth. NVIDIA, however, requested speeds of at least 10Gbps per pin to meet the growing demands of large-scale AI models. In response, Samsung raised HBM4's speed to 11Gbps, and SK hynix achieved similar results. While Micron initially lagged behind, it recently confirmed shipping 11Gbps HBM4 samples to a major client — widely believed to be NVIDIA — easing concerns about its progress.

With HBM4 already exceeding expectations before mass production, the semiconductor industry now anticipates that Samsung's HBM4E will set a new benchmark for bandwidth, efficiency, and performance in the AI and high-performance computing markets.