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FS100R12PT4BOSA1: Features, Specs & More

2025-12-15 17:27:09Mr.Ming
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FS100R12PT4BOSA1: Features, Specs & More

The Infineon Technologies FS100R12PT4BOSA1 is a high-performance IGBT power module designed for demanding industrial and energy applications. It combines high voltage capability, robust current handling, and a compact ECONO4-1 package, making it a reliable choice for modern power conversion systems. In this comprehensive article, we'll delve into the intricacies of the FS100R12PT4BOSA1, uncovering its definition, key features, specifications, applications, and a closer look at its manufacturer.

 

Catalog

FS100R12PT4BOSA1's Overview

Key Features

Specifications

Applications

FS100R12PT4BOSA1's Manufacturer

Conclusion

 

FS100R12PT4BOSA1's Overview

The FS100R12PT4BOSA1 is an N-channel IGBT power module with a hex configuration optimized for high-current and high-voltage switching applications. It integrates multiple IGBT and diode elements into a single ECONO4-1 package to simplify system design and improve electrical and thermal performance.

 

Key Features

Let's delve into the standout features that make the FS100R12PT4BOSA1 a standout in the world of electronics:

· The module supports a maximum collector-emitter voltage of 1200V.

· The device provides a maximum continuous DC collector current of 135A.

· The typical collector-emitter saturation voltage is 1.75V.

· The module operates reliably across a wide temperature range from −40°C to 150°C.

· The ECONO4-1 package enables compact system layouts and efficient thermal management.

· The design supports a maximum gate-emitter voltage of ±20V.

· The module is suitable for screw mounting to ensure mechanical stability.

 

Specifications

Now, let's take a closer look at the technical specifications that define the capabilities of the FS100R12PT4BOSA1:

Type

Parameter

Channel Type

N

Configuration

Hex

Typical Collector-Emitter Saturation Voltage (V)

1.75

Maximum Collector-Emitter Voltage (V)

1200

Maximum Power Dissipation (mW)

500

Maximum Gate Emitter Voltage (V)

±20

Maximum Continuous DC Collector Current (A)

135

Maximum Gate Emitter Leakage Current (uA)

0.1

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

150

Packaging

Tray

Mounting

Screw

Package Height

17

Package Width

103

Package Length

130

PCB changed

20

Supplier Package

ECONO4-1

Pin Count

20

 * FS100R12PT4BOSA1's Datasheet

 

Applications

The FS100R12PT4BOSA1 is designed for industrial and commercial power electronics systems. Typical applications include:

· Motor drives and industrial inverters.

· Power supplies for renewable energy systems.

· UPS (Uninterruptible Power Supply) units.

· Electric vehicle charging stations.

· Traction and rail transport power systems.

 

FS100R12PT4BOSA1's Manufacturer

Established in 1999, Infineon Technologies has emerged as a global leader in semiconductor solutions, pioneering innovations that power various industries worldwide. Headquartered in Neubiberg, Germany, the company has played a pivotal role in shaping the landscape of modern electronics. Infineon specializes in designing and manufacturing advanced semiconductor technologies, encompassing power management, automotive electronics, industrial applications, and security solutions.

 

Conclusion

The Infineon FS100R12PT4BOSA1 IGBT module is a robust and efficient choice for high-power industrial applications requiring 1200V blocking capability and high current handling. With its low saturation voltage, wide temperature tolerance, and industry-standard ECONO4-1 package, it enables designers to build reliable, scalable, and energy-efficient power systems. For engineers and procurement teams seeking a proven IGBT module for demanding applications, the FS100R12PT4BOSA1 represents a dependable long-term solution.

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