SK hynix Launches 256GB DDR5 RDIMM with 32Gb DRAM

On December 18, 2025, SK hynix announced that its 256GB DDR5 RDIMM* high-capacity server memory module, built on fifth-generation 10nm-class (1b) 32Gb DRAM dies, has achieved Intel® Data Center Certified status on the Intel® Xeon® 6 platform—an industry first for this configuration.

*Registered Dual In-Line Memory Module (RDIMM): DRAM module for server/workstation that includes a register or buffer chip to relay address and command signals between the memory controller and DRAM chip in a memory module

The certification was completed at Intel's Advanced Data Center Development Laboratory in the United States, following multiple rounds of comprehensive testing. These evaluations confirmed stable performance, strong platform compatibility, and consistent quality when the module operates with Xeon processors. Earlier this year, SK hynix also secured certification for a 256GB module based on its fourth-generation 10nm-class (1a) 16Gb DRAM, highlighting steady progress in high-density DDR5 development.

According to SK hynix, being the first to validate compatibility with Intel’s latest server platform demonstrates that its high-capacity DDR5 technology is now among the most advanced globally. The company plans to build on this milestone by deepening cooperation with major data center operators and responding quickly to rising demand from server customers, especially as next-generation systems scale up.

Memory is becoming a decisive factor in AI infrastructure performance. Modern AI inference workloads go beyond simple response generation and increasingly involve complex reasoning, driving exponential growth in real-time data processing. To handle this efficiently, servers require memory that combines large capacity, high bandwidth, and low power consumption—pushing demand sharply upward.

SK hynix positions this module as a practical answer to those needs. The company notes that servers equipped with the 32Gb-based 256GB DDR5 RDIMM deliver up to 16% higher inference performance compared with systems using 128GB modules based on the same 32Gb density. In addition, by utilizing 32Gb DRAM chips, the design achieves up to approximately 18% lower power consumption than previous 256GB products based on 16Gb 1a DRAM. With this improved power efficiency and outstanding performance per watt*, the company expects strong interest from data center customers.

*Performance per watt: An indicator of data capacity per second that can be processed per unit of power

Sangkwon Lee, head of DRAM Product Planning & Enablement at SK hynix, said the certification further strengthens the company's leadership in the DDR5 server DRAM market and enables faster responses to customer requirements. He added that SK hynix will continue expanding its portfolio of high-performance, low-power, high-capacity memory to support the growing demands of AI-driven systems.

Dimitrios Ziakas, Vice President of Platform Architecture at Intel, commented that close collaboration between the two companies significantly improved technical readiness and contributed to advances in memory technology. He noted that high-capacity modules like this one are well suited to addressing rapidly growing AI workloads, delivering meaningful gains in performance and efficiency for data center environments.