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BCR08PNH6327XTSA1: Features, Specs & More

2025-12-30 15:05:49Mr.Ming
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BCR08PNH6327XTSA1: Features, Specs & More

The Infineon MBCR08PNH6327XTSA1 is a high-performance dual BJT transistor designed for automotive and industrial applications. It features both NPN and PNP configurations in a compact 6-pin SOT-363 surface-mount package. This transistor supports reliable operation under harsh conditions and is compliant with AEC-Q101 automotive standards, ensuring robustness and durability. In this comprehensive article, we'll delve into the intricacies of the BCR08PNH6327XTSA1, uncovering its definition, key features, specifications, applications, and a closer look at its manufacturer.

 

Catalog

BCR08PNH6327XTSA1's Overview

Key Features

Specifications

Applications

BCR08PNH6327XTSA1's Manufacturer

Conclusion

 

BCR08PNH6327XTSA1's Overview

The MBCR08PNH6327XTSA1 is a dual transistor device combining NPN and PNP transistors in a single package. It operates with a maximum collector-emitter voltage of 50V and a collector current of up to 0.1A. Designed for surface-mount PCB assembly, it delivers high current gain and excellent bandwidth while maintaining low power dissipation. This device is suitable for signal amplification, switching, and automotive circuit applications where compact, reliable transistors are required.

 

Key Features

Let's delve into the standout features that make the BCR08PNH6327XTSA1 a standout in the world of electronics:

· The device features a dual NPN/PNP configuration for versatile circuit design.

· It supports a maximum collector-emitter voltage of 50V, suitable for low-power switching.

· It provides a maximum continuous DC collector current of 0.1A for precise control applications.

· The minimum DC current gain is 70 at 5mA and 5V, ensuring stable amplification.

· It delivers a typical current gain bandwidth of 170MHz, allowing high-speed operation.

· It has a typical input resistor of 2.2kΩ for predictable input characteristics.

· The resistor ratio is 0.047, supporting linear circuit performance.

· The maximum collector-emitter saturation voltage is 0.3V at 0.5mA and 10mA, enabling low-loss switching.

· The transistor handles maximum power dissipation of 250mW, suitable for low-power circuits.

· It operates across a temperature range of -65°C to 150°C, ideal for automotive applications.

· The device comes in a tape and reel packaging, optimized for automated assembly.

 

Specifications

Now, let's take a closer look at the technical specifications that define the capabilities of the BCR08PNH6327XTSA1:

Type

Parameter

Type

NPN|PNP

Configuration

Dual

Maximum Collector-Emitter Voltage (V)

50

Maximum Continuous DC Collector Current (mA)

0.1

Minimum DC Current Gain

70@5mA@5V

Typical Current Gain Bandwidth (MHz)

170

Typical Input Resistor (kohm)

2.2

Typical Resistor Ratio

0.047

Maximum Collector-Emitter Saturation Voltage (V)

0.3@0.5mA@10mA

Maximum Power Dissipation (mW)

250

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

150

Packaging

Tape and Reel

Mounting

Surface Mount

Package Height

0.9(Max) mm

Package Width

1.25 mm

Package Length

2 mm

PCB changed

6

Standard Package Name

SOT

Supplier Package

SOT-363

Pin Count

6

Lead Shape

Gull-wing

 * BCR08PNH6327XTSA1's Datasheet

 

Applications

The BCR08PNH6327XTSA1 is designed for automotive, industrial, and consumer electronics applications. Common use cases include:

· Automotive sensor circuits for precise signal amplification.

· Low-current switching circuits in industrial controllers.

· Signal conditioning and amplification in communication devices.

· Small-signal applications in low-power electronic devices.

 

BCR08PNH6327XTSA1's Manufacturer

Established in 1999, Infineon Technologies has emerged as a global leader in semiconductor solutions, pioneering innovations that power various industries worldwide. Headquartered in Neubiberg, Germany, the company has played a pivotal role in shaping the landscape of modern electronics. Infineon specializes in designing and manufacturing advanced semiconductor technologies, encompassing power management, automotive electronics, industrial applications, and security solutions.

 

Conclusion

The Infineon BCR08PNH6327XTSA1 dual NPN/PNP transistor is a versatile, high-reliability component suitable for a wide range of automotive and industrial electronics applications. With its robust specifications, compact SOT-363 package, and adherence to AEC-Q101 standards, it offers designers dependable performance in low-power switching and amplification circuits. Choosing this transistor ensures durability, stability, and efficiency in demanding environments.

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